Abstract: Metal seed layers and/or barrier layers are treated to render them more suitable for subsequent electrochemical deposition of metals thereon. The processes employ thermal techniques to reduce metal oxides that have formed on the surface of the seed layers and/or barrier layers.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.

Abstract: Methods and apparatuses for processing microfeature workpieces are disclosed herein. In one embodiment, a workpiece support carries a workpiece in a processing volume of a processing chamber. A first fluid delivery device directs an unsupported stream of a first fluid into the processing volume. A second fluid delivery device directs an unsupported stream of a second fluid into the processing volume. A first fluid collector receives at least a portion of the first fluid, and a second fluid collector receives at least a portion of the second fluid. Accordingly, embodiments of the apparatus support the use of multiple fluids in a single processing volume to control, restrict, and/or eliminate mixing between the two fluids while reducing and/or eliminating the need for purging and/or rinsing portions of the apparatus. The rotation rate and/or position of the workpiece can also be controlled to control the manner in which the fluids are collected.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.

Abstract: A method and apparatus for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth. In accordance with the method, at least two electrodes are employed to execute the electroanalytical technique. Gasses that are trapped or generated at the surface of one or both of the electrodes of the pair are reduced and/or removed by directing a flow of solution toward the electrode surface. This flow of solution against the electrode surface acts to automatically flush the generated gasses (typically in the form of small bubbles) from the electrode surface and generally eliminates the need for manual purging by an operator. Elimination of these gasses reduces or eliminates variability in the open circuit potential, and concomitant noise that would otherwise occur in the electroanalytical measurements.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.

Abstract: An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.

Abstract: An automated chemical management system for managing the chemical content of an electrochemical bath used to deposit a material on the surface of a microelectronic workpiece is set forth. The automated chemical management system includes a dosing system that is adapted to dose an amount of one or more chemicals to replenish a given electrochemical bath constituent in accordance with a predetermined dosing equation. The chemical management system also includes an analytical measurement system that is adapted to provide a measurement result indicative of the amount of the given constituent in the electrochemical bath at predetermined time intervals. The chemical management system uses the measurement results to modify the dosing equation of the dosing system. In this manner, the replenishment operations executed by the chemical management system are effectively refined over time thereby providing more accurate control of the amount of the target constituent in the electrochemical bath.

Abstract: A method and apparatus for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth. In accordance with the method, at least two electrodes are employed to execute the electroanalytical technique. Gasses that are trapped or generated at the surface of one or both of the electrodes of the pair are reduced and/or removed by directing a flow of solution toward the electrode surface. This flow of solution against the electrode surface acts to automatically flush the generated gasses (typically in the form of small bubbles) from the electrode surface and generally eliminates the need for manual purging by an operator. Elimination of these gasses reduces or eliminates variability in the open circuit potential, and concomitant noise that would otherwise occur in the electroanalytical measurements.

Abstract: Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure.