Patents by Inventor Dal-won Lee

Dal-won Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming capacitors with high dielectric layers and capacitors so formed
    Patent number: 7179704
    Abstract: Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: February 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-hwan Lee, Jae-dong Byun, Sung-tae Kim, Young-sun Kim, Dal-won Lee, Song-won Ko
  • Methods of forming capacitors with high dielectric layers and capacitors so formed
    Publication number: 20050186687
    Abstract: Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(Ti1-xSnx)O3 (BTS) or Ba(Ti1-xZrx)O3 (BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
    Type: Application
    Filed: December 2, 2004
    Publication date: August 25, 2005
    Inventors: Seung-hwan Lee, Jae-dong Byun, Sung-tae Kim, Young-sun Kim, Dal-won Lee, Song-won Ko