Abstract: A nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type can obtain an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film includes in succession from bottom to top a bottom layer, a substrate, a bottom layer, a functional layer, a buffer layer, an insulation layer, a conductive layer, and a cap layer. The buffer layer and the insulation layer can be selectively added as required when the conductive layer is made of a magnetic metal. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can obtain different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.

Abstract: Disclosed are nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type, for obtaining an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film comprises in succession from bottom to top a bottom layer (102), a substrate (101), a bottom layer (103), a functional layer (104), a buffer layer (105), an insulation layer (106), an intermediate conductive layer (107), and a cap layer (108), and the buffer layer (107) and the insulation layer (106) can be selectively added as required when the intermediate conductive layer (107) is a magnetic metal, a magnetic alloy or a magnetic metal composite layer.