Patents by Inventor Dale Ibbotson

Dale Ibbotson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Area efficient series MIM capacitor
    Patent number: 9171897
    Abstract: Two series-connected metal-insulator-metal (MIM) capacitors are disclosed that are suitable for fabrication in the back-end structure of an integrated circuit. The MIM capacitors have first and second electrically conducting plates on a first insulating layer, third and fourth electrically conducting plates overlapping the first and second conducting plates, a second insulating layer between the first and third conducting plates and between the second and fourth conducting plates, a blind via coupling the first and fourth conducting plates, and connections to the second and third conducting plates. Methods of fabricating such series-connected MIM capacitors are also disclosed.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: October 27, 2015
    Assignee: Altera Corporation
    Inventors: Queennie Suan Imm Lim, Dale Ibbotson
  • Angled implantation for deep submicron device optimization
    Patent number: 8519403
    Abstract: A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.
    Type: Grant
    Filed: February 4, 2011
    Date of Patent: August 27, 2013
    Assignee: Altera Corporation
    Inventors: Che Ta Hsu, Christopher J. Pass, Dale Ibbotson, Jeffrey T. Watt, Yanzhong Xu
  • Angled implantation for deep submicron device optimization
    Patent number: 7883946
    Abstract: A method for forming a submicron device includes depositing a hard mask over a first region that includes a polysilicon well of a first dopant type and a gate of a second dopant type and a second region that includes a polysilicon well of a second dopant type and a gate of a first dopant type. The hard mask over the first region is removed. Angled implantation of the first dopant type is performed to form pockets under the gate of the second dopant type.
    Type: Grant
    Filed: May 8, 2008
    Date of Patent: February 8, 2011
    Assignee: Altera Corporation
    Inventors: Che Ta Hsu, Christopher J. Pass, Dale Ibbotson, Jeffrey T. Watt, Yanzhong Xu