Abstract: Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in meatallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

Abstract: Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

Abstract: Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

Abstract: Electrical laminates are prepared from prepreg materials prepared by impregnating a substrate with a laminating varnish comprising a ketone solvent solution of a curable composition comprising (A) at least one aromatic based epoxy resin having an average number of epoxide groups per molecule of more than 2; (B) a mixture of (1) at least one phenolic hydroxyl-containing compound having an average of more than 1 but not more than 2 phenolic hydroxyl groups per molecule; and (2) at least one phenolic hydroxyl-containing compound having an average of more than 2 phenolic hydroxyl groups per molecule; and (C), optionally, at least one catalyst for effecting the reaction between (A) and (B).

Abstract: Laminates are prepared for reinforced expoxy resin compositions comprising (A) a reinforcing material such as fiberglass, (B) one or more epoxy resins such as a hydrocarbon-phenol eposy resin and (C) one or more epoxy resin curing agents such as a hydrocarbon-phenol resin or phenol-formaldehyde novolac resin. These laminates are particularly suitable for use in electrical applications such as the manufacture of printed circuit boards.

Abstract: Curable compositions are disclosed which comprise a polyglycidyl ether such as the triglycidylether of tris(hydroxyphenyl)methane and a halogenated dihydric phenol such as tetrabromobisphenol A. These compositions can be cured by heating in the presence or absence of catalyst for reacting epoxy groups with phenolic hydroxyl groups such as 2-methyl imidazole. These compositions are particularly useful in the preparation of electrical laminates.