Abstract: Medium-range and global network information and control for a vehicle is achieved with a portable wireless key fob, a user-provided nomadic device, and a vehicle-installed telematics unit including a medium-range RF transceiver and a wireless network transceiver. The fob includes a medium-range RF transceiver for bi-directional communication with the telematics unit, and a short-range wireless transceiver for bi-directional communication with the nomadic device. The fob communicates with the telematics unit in a conventional manner, and also relays information between the telematics unit and the nomadic device. If a communication initiated via the fob cannot be completed because the fob is out of range, the communication is sent to the nomadic device for network transmission to the telematics unit. If a communication initiated via the nomadic device cannot be completed due to inadequate signal reception, the communication is sent to the fob for RF transmission to the telematics unit.

Abstract: Medium-range remote communication and control for a vehicle is achieved with a wireless vehicle telematics unit, a medium-range wireless portable fob, and an unmodified wireless personal communication device. The portable fob includes a medium-range RF transceiver for bi-directional communication with the telematics unit and a short-range wireless transceiver for bi-directional communication with the personal communication device. The fob communicates with the vehicle telematics unit in a conventional manner, and also relays information between the telematics unit and the personal communication device. Communication can be initiated by the telematics unit or by the operator via the fob or personal communication device. Once communication is initiated, the fob relays: (1) menu options and status information from the telematics unit to the personal communication device; and (2) menu selections from the personal communication device to the telematics unit.

Abstract: A system and a method for determining whether an operator of a vehicle has an impaired cognitive state are provided. The method includes determining an intoxication indication value indicative of whether the operator is intoxicated, utilizing a controller. The method further includes determining a drowsiness indication value indicative of whether the operator is drowsy, utilizing the controller. The method further includes determining a fatigue indication value indicative of whether the operator is fatigued, utilizing the controller. The method further includes determining a cognitively impaired indication value based on at least one of the intoxication indication value, the drowsiness indication value, and the fatigue indication value. The method further includes generating a signal indicating that the operator is cognitively impaired when the cognitively impaired indication value is greater than a threshold cognitively impaired indication value, utilizing the controller.

Abstract: A system and a method for determining whether an operator of a vehicle has an impaired cognitive state are provided. The method includes determining an intoxication indication value indicative of whether the operator is intoxicated, utilizing a controller. The method further includes determining a drowsiness indication value indicative of whether the operator is drowsy, utilizing the controller. The method further includes determining a fatigue indication value indicative of whether the operator is fatigued, utilizing the controller. The method further includes determining a cognitively impaired indication value based on at least one of the intoxication indication value, the drowsiness indication value, and the fatigue indication value. The method further includes generating a signal indicating that the operator is cognitively impaired when the cognitively impaired indication value is greater than a threshold cognitively impaired indication value, utilizing the controller.

Abstract: A sensor apparatus and method that can measure either a linear position or an angular position of a device. A linear array of galvanomagnetic sensing elements is fixedly mountable adjacent the device. A target is connectable to the device such that the target moves adjacent a surface of the linear array in response to movement of the device and is shaped so that a magnetic flux density curve resulting from excitation of the sensing elements includes a peak and/or a valley. A first circuit excites each of the sensing elements, and a second circuit measures a magnetic flux density value at each of the sensing elements. A maximum and/or a minimum of the flux density curve indicates the position of the device.

Abstract: A controlled electron mobility galvanomagnetic device comprising a layer of indium antimonide alloyed with a Group 13 isoelectronic element antimonide and doped n-type, the layer disposed on an insulating substrate.

Abstract: A sensor apparatus and method that can measure either a linear position or an angular position of a device. A linear array of galvanomagnetic sensing elements is fixedly mountable adjacent the device. A target is connectable to the device such that the target moves adjacent a surface of the linear array in response to movement of the device and is shaped so that a magnetic flux density curve resulting from excitation of the sensing elements includes a peak and/or a valley. A first circuit excites each of the sensing elements, and a second circuit measures a magnetic flux density value at each of the sensing elements. A maximum and/or a minimum of the flux density curve indicates the position of the device.

Abstract: A controlled electron mobility galvanomagnetic device comprising a layer of indium antimonide alloyed with a Group 13 isoelectronic element antimonide and doped n-type, the layer disposed on an insulating substrate.

Abstract: A method of lithography is disclosed for making very small structures (10.sup.-6 m and smaller) on a surface such as in the manufacture of semiconductor devices. Many micron-sized or smaller droplets of a suitable material are formed on the surface, and the droplets are used for forming structures on or holes in the surface and thus are the basis for the shape and location of the structures.

Abstract: A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.

Abstract: A semiconductor film is provided characterized by having high carrier mobility and carrier density. The semiconductor film is doped with the rare-earth element erbium so as to improve its temperature stability. The semiconductor film is thereby particularly suited for use as a magnetic field sensing device, such as a Hall effect sensor or magnetoresistor. The semiconductor film is formed from a narrow-gap Group III-V compound, preferably indium antimonide, which is n-doped with the erbium to provide an electron density sufficient to increase temperature stability. In particular, the semiconductor film is characterized by a nini-structure which is generated using a slab-doping technique. The slab-doping process encompasses the growing of alternating layers of doped and undoped layers of the Group III-V compound, with the doped layers being substantially thinner than the undoped layers, and preferably as thin as one atomic plane.

Abstract: A magnetic field sensor, such as a magnetoresistor, includes a strip of a layer of a high electron mobility semiconductor whose electrical characteristics vary when a magnetic field is applied thereto on the surface of a body (substrate) of an insulating layer. Conductive contacts are on the strip at the ends thereof and conductive shorting bars are on and spaced along the strip to divide the strip into active regions. The body is mounted on a permanent magnet assembly which includes a magnet and a layer of a ferromagnetic material with the ferromagnetic material extending over the strip. The ferromagnetic layer is in close proximity to only the strip and, more preferably, to only the active regions of the strip so as to confine the magnetic field to the strip.

Abstract: A magnetic field sensor, such as a magnetoresistor, having improved electron mobility comprises a substrate of an insulating semiconductor material, such as gallium arsenide or indium phosphide, having on a surface thereof a narrow strip of a thin active film. The active film has a thin first layer of undoped or lightly doped high electron mobility semiconductor material, such as indium antimonide or indium arsenide, on the substrate surface, and a second layer of the semiconductor material, which may be thicker than the first layer, on the first layer. The second layer is at least partially doped n-type conductivity so as to have a high electron density. The second layer may be entirely of the n-type conductivity semiconductor material or a superlattice of alternating layers of n-type conductivity and intrinsic semiconductor materials or a superlattice of intrinsic semiconductor material and a ternary or quaternary alloy of the semiconductor material which is at least partially of n-type conductivity.

Abstract: A magnetic field sensor, such as a magnetoresistor, Hall effect device or magnetotransistor, comprising an active layer of indium antimonide on the surface of a substrate having a length substantially greater than its width. A conductive contact is on the active layer at each end thereof and a plurality of shorting bar contacts are on the active layer and spaced along the length of the active layer between the end contacts. The contacts are each of a thin layer of a highly conductive n-type conductivity semiconductor material which has a low sheet resistivity and a low contact resistance with the active layer. A layer of a conductive metal may be provided on the semiconductor material layer of the contact, and a thin layer of highly conductive n-type indium antimonide may be provided between the semiconductive material layer and the active layer.

Abstract: A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

Abstract: A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The device includes means for inducing or enhancing an accumulation layer adjacent the film outer surface. With film thicknesses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity. A method for making the sensor is also described.

Abstract: For increased sensitivity, an improved position sensor includes a magnetic circuit in which the stationary portion includes a permanent magnet whose width is optimally 1.5 times the tooth pitch of the exciter portion of the sensor and the magnet face proximate the exciter includes a thin layer of ferromagnetic material over which is centered a narrow magnetic sensing element, such as a magnetoresistor. The sensing element has a width typically less than the tooth width. The sensing element includes a thin film of a monocrystalline semiconductive material, preferably having only a moderate bulk mobility and a larger band gap, such as indium arsenide. Current carriers flow along the length of the thin film in a surface accumulation layer, effective to provide a significant apparent increase in mobility and conductivity of said semiconductive material, and an actual increase in magnetic sensitivity and temperature insensitivity.

Abstract: A magnetoresistive sensor that includes a thin film of nominally undoped monocrystalline indium arsenide. An indium arsenide film is described that appears to have a naturally occurring accumulation layer adjacent its outer surface. With film thickneses below 5 micrometers, preferably below 3 micrometers, the presence of the accumulation layer can have a very noticeable effect. A method for making the sensor is also described. The unexpected improvement provides a significant apparent increase in mobility and conductivity of the indium arsenide, and an actual increase in magnetic sensitivity and temperature insensitivity.

Abstract: A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by an n-i-p-i doping profile or superstructure. Such a superlattice is used to provide a region of long recombination times for the normal flow of charge carriers from which the carriers are deflected into short recombination time regions by a magnetic field being sensed.

Abstract: Spectroscopic measurements of stable isotopes are performed using a tunable lead salt diode laser. The design of the system is based upon the optimization of isotopic spectral lines from two different path lengths in an absorption cell using a single gaseous sample. A short path cell to measure the more abundant species and a long path cell to measure the less abundant species are used. A micrometer adjustment of a path length is used for equalizing spectral line intensities to obtain a measure of isotope enrichment or of absolute isotopic concentration.