Patents by Inventor Dale M. Shaw

Dale M. Shaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structures having T-shaped electrodes
    Patent number: 9887089
    Abstract: A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: February 6, 2018
    Assignee: Raytheon Company
    Inventors: Kiuchul Hwang, Dale M. Shaw, Adrian D. Williams
  • Semiconductor Structures Having T-Shaped Electrodes
    Publication number: 20170025278
    Abstract: A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid dielectric, such as air.
    Type: Application
    Filed: October 5, 2016
    Publication date: January 26, 2017
    Applicant: Raytheon Company
    Inventors: Kiuchul Hwang, Dale M. Shaw, Adrian D. Williams
  • Semiconductor structure with layers having different hydrogen contents
    Patent number: 9293379
    Abstract: A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.
    Type: Grant
    Filed: September 3, 2009
    Date of Patent: March 22, 2016
    Assignee: Raytheon Company
    Inventors: Eduardo M. Chumbes, William E. Hoke, Kelly P. Ip, Dale M. Shaw, Steven K. Brierley
  • SEMICONDUCTOR STRUCTURES HAVING T-SHAPED ELECTRODES
    Publication number: 20150235856
    Abstract: A semiconductor structure having a T-shaped electrode. The electrode has a top portion and a narrower stem portion extending from the top portion to a surface of a substrate. A solid dielectric layer has side portions juxtaposed and abutting sidewalls of a lower portion of the stem of electrode. A bottom surface of the top portion is spaced from an upper surface portion by a non-solid, dielectric, such as air.
    Type: Application
    Filed: February 20, 2014
    Publication date: August 20, 2015
    Applicant: Raytheon Company
    Inventors: Kiuchul Hwang, Dale M. Shaw, Adrian D. Williams
  • SEMICONDUCTOR STRUCTURE AND METHOD
    Publication number: 20110049581
    Abstract: A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.
    Type: Application
    Filed: September 3, 2009
    Publication date: March 3, 2011
    Applicant: Raytheon Company
    Inventors: Eduardo M. Chumbes, William E. Hoke, Kelly P. Ip, Dale M. Shaw, Steven K. Brierley