Patents by Inventor Dale Warner Martin

Dale Warner Martin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduction of reverse short channel effects by implantation of neutral dopants
    Patent number: 6486510
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Grant
    Filed: November 12, 2001
    Date of Patent: November 26, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Jr., Dale Warner Martin, James Albert Slinkman
  • Reduction of reverse short channel effects by implantation of neutral dopants
    Publication number: 20020063294
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Application
    Filed: November 12, 2001
    Publication date: May 30, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Dale Warner Martin, James Albert Slinkman
  • Reduction of reverse short channel effects by deep implantation of neutral dopants
    Patent number: 6352912
    Abstract: A FET with reduced reverse short channel effects is described, as well as a method to make said FET. Germanium is implanted throughout a semiconductor substrate at an intensity and dose such that a peak ion concentration is created below the source and drain of the FET. The germanium can be implanted prior to gate and source and drain formation, and reduces the reverse short channel effect normally seen in FETs. The short channel effect normally occurring in FETs is not negatively impacted by the germanium implant.
    Type: Grant
    Filed: March 30, 2000
    Date of Patent: March 5, 2002
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Scott Brown, Stephen Scott Furkay, Robert J. Gauthier, Jr., Dale Warner Martin, James Albert Slinkman