Patents by Inventor Dal-Keun Park

Dal-Keun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
    Patent number: 6851939
    Abstract: A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.
    Type: Grant
    Filed: April 17, 2002
    Date of Patent: February 8, 2005
    Assignee: Korea Institute of Science and Technology
    Inventors: Joong-Kee Lee, Dal-Keun Park, Byung-Won Cho, Joo-Man Woo, Bup-Ju Jeon
  • System for chemical vapor deposition at ambient temperature using electron cyclotron resonance and method for depositing metal composite film using the same
    Publication number: 20030000827
    Abstract: A system for chemical vapor deposition at ambient temperature using electron cyclotron resonance (ECR) comprising: an ECR system; a sputtering system for providing the ECR system with metal ion; an organic material supply system for providing organic material of gas or liquid phase; and a DC bias system for inducing the metal ion and the radical ion on a substrate is provided, and a method for fabricating metal composite film comprising: a step of providing a process chamber with the gas as plasma form using the ECR; a step of providing the chamber with the metal ion and the organic material; a step of generating organic material ion and radical ion by reacting the metal ion and the organic material with the plasma; and a step of chemically compounding the organic material ion and the radical ion after inducing them on a surface of a specimen is also provided.
    Type: Application
    Filed: April 17, 2002
    Publication date: January 2, 2003
    Applicant: Korea Institute of Science and Technology
    Inventors: Joong-Kee Lee, Dal-Keun Park, Byung-Won Cho, Joo-Man Woo, Bup-Ju Jeon