Abstract: A metal oxide semiconductor (MOS)-based power device includes a semiconductor region, drain and source electrodes, a gate electrode separated from the semiconductor region by SiO2, where the channel length (CHL) has a range of between about 0.6 ?m and about 0.5 ?m, the silicon dioxide has a corresponding thickness (tox) range of between about 5 nm to about 30 nm, where the CHL has a range of between about 0.5 ?m and about 0.4 ?m, the tox has a corresponding range of between about 5 nm to about 25 nm, where the CHL has a range of between about 0.4 ?m and about 0.3 ?m, the tox has a corresponding range of between about 5 nm to about 20 nm, where the CHL has a range of between about 0.3 ?m and about 0.2 ?m, the tox has a corresponding range of between about 5 nm to about 15 nm.

Abstract: A silicon carbide (SiC) metal oxide semiconductor (MOS) power device is disclosed which includes an SiC drain semiconductor region, an SiC drift semiconductor region coupled to the SiC drain semiconductor region, an SiC base semiconductor region coupled to the SiC drift semiconductor region, an SiC source semiconductor region coupled to the SiC base semiconductor region, a source electrode coupled to the SiC source semiconductor region, a drain electrode coupled to the SiC drain semiconductor region, a gate electrode, wherein voltage of the gate electrode with respect to the SiC base semiconductor region is less than or equal to about 12 V and thickness of the dielectric material is such that the electric field in the dielectric material is about 4 MV/cm when said gate voltage is about 12 V.

Abstract: A metal-oxide-semiconductor (MOS) power device includes a drain semiconductor region, a drift semiconductor region coupled to the drain semiconductor region, a base semiconductor region coupled to the drift semiconductor region and isolated by the drift semiconductor region from the drain semiconductor region, a source semiconductor region coupled to the base semiconductor region, a source electrode, a drain electrode, a gate electrode provided adjacent at least a portion of but isolated from the drift semiconductor region by a dielectric material, wherein the dielectric material has a thickness between 1 nm and 30 nm multiplied by a correction factor defined as a ratio of dielectric permittivity of the dielectric material and the permittivity of silicon dioxide, and wherein the device is configured to withstand greater than 100 V between the drain electrode and the source electrode when substantially no current is flowing through the drain electrode.

Abstract: A silicon carbide semiconductor device, wherein the gate insulator is formed by performing a hydrogen etch on an upper exposed surface of a SiC substrate, performing a termination anneal on the upper exposed surface, and depositing a gate insulator material on the upper exposed surface. The SiC substrate may include multiple n-type and p-type doped regions.

Abstract: A device for rapid concentration and detection of live cells in fluids includes a filter to capture a cell sample. The filter includes a first physical barrier with apertures of a first size and a second physical barrier with apertures of a second size smaller than the first size to isolate the cell sample on the filter. Growth detection circuitry associated with the filter electrically measures a cell growth rate associated with the cell sample in less than 2 days. The growth detection circuitry includes a mechanical filter for concentration of cells. The filter and growth detection circuitry are integrally formed within the device, which is sealed.

Abstract: A device for rapid concentration and detection of live cells in fluids includes a filter to capture a cell sample. The filter includes a first physical barrier with apertures of a first size and a second physical barrier with apertures of a second size smaller than the first size to isolate the cell sample on the filter. Growth detection circuitry associated with the filter electrically measures a cell growth rate associated with the cell sample in less than 2 days. The growth detection circuitry includes a mechanical filter for concentration of cells. The filter and growth detection circuitry are integrally formed within the device, which is sealed.

Abstract: A device for rapid concentration and detection of live cells in fluids includes a filter to capture a cell sample. The filter includes a first physical barrier with apertures of a first size and a second physical barrier with apertures of a second size smaller than the first size to isolate the cell sample on the filter. Growth detection circuitry associated with the filter electrically measures a cell growth rate associated with the cell sample in less than 2 days. The growth detection circuitry includes a mechanical filter for concentration of cells. The filter and growth detection circuitry are integrally formed within the device, which is sealed.

Abstract: A device for rapid concentration and detection of live cells in fluids includes a filter to capture a cell sample. The filter includes a first physical barrier with apertures of a first size and a second physical barrier with apertures of a second size smaller than the first size to isolate the cell sample on the filter. Growth detection circuitry associated with the filter electrically measures a cell growth rate associated with the cell sample in less than 2 days. The growth detection circuitry includes a mechanical filter for concentration of cells. The filter and growth detection circuitry are integrally formed within the device, which is sealed.

Abstract: A device for processing fluids includes a filter to capture a cell sample. The filter has a physical barrier to isolate the cell sample on the filter. Growth detection circuitry is associated with the filter. The growth detection circuitry identifies, through electrical measurements, a cell growth rate and hence the presence of live cells associated with the cell sample.

Abstract: A device for processing fluids includes a filter to capture a cell sample. The filter has a physical barrier to isolate the cell sample on the filter. Growth detection circuitry is associated with the filter. The growth detection circuitry identifies, through electrical measurements, a cell growth rate and hence the presence of live cells associated with the cell sample.