Patents by Inventor Dalsuke Matsushita

Dalsuke Matsushita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistance-variable memory device
    Patent number: 9112132
    Abstract: A memory device includes a first electrode, a second electrode, a third electrode, a first variable resistance layer between the first electrode and the third electrode, and a second variable resistance layer between the second electrode and the third electrode. The first, second, and third electrodes, and the first and second variable resistance layers are formed of materials that cause the first variable resistance layer to transition from a high resistance state to a low resistance state when a voltage is applied across the first and second electrodes and maintain the high resistance state when the voltage is cut off, and cause the second variable resistance layer to transition from a high resistance state to a low resistance state when the voltage is applied across the first and second electrodes and transition from the high resistance state to the low resistance state when the voltage is cut off.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: August 18, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Ishikawa, Yoshifumi Nishi, Dalsuke Matsushita, Masato Koyama