Abstract: A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

Abstract: A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AtGaAs are also amenable to beneficial processes described herein.

Abstract: A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

Abstract: A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

Abstract: A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; and forming an emitter region over the compound base region including forming a first emitter layer within the emitter region and doping the first emitter layer with a pre-determined percentage of at least one element associated with the compound base region. In one implementation, an emitter region is formed including multiple emitter layers to enhance a surface recombination surface area within the emitter region.

Abstract: The present invention is an electronic memory cell and a method for the cell's fabrication comprising a first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.

Abstract: A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; forming a cap layer overlying the compound base region including doping the cap layer with a pre-determined percentage of at least one element associated with the compound base region; and forming an emitter region over the cap layer.

Abstract: A method for pseudomorphic growth and integration of a strain-compensated metastable and/or unstable compound base having incorporated oxygen and an electronic device incorporating the base is described. The strain-compensated base is doped by substitutional and/or interstitial placement of a strain-compensating atomic species. The electronic device may be, for example, a SiGe NPN HBT.

Abstract: The present invention is an electronic memory cell and a method for the cell's fabrication comprising a first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.

Abstract: A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; forming a cap layer overlying the compound base region including doping the cap layer with a pre-determined percentage of at least one element associated with the compound base region; and forming an emitter region over the cap layer.

Abstract: A method and system for providing a bipolar transistor is described. The method and system include providing a compound base region including includes a compound box extension, providing an emitter region, and providing a collector region. The emitter region is coupled with the base region. The SiGe base region is coupled with the collector region and includes a SiGe box extension. The box extension resides substantially between the emitter and the heterogeneous base region.

Abstract: A method for fabricating a heterojunction bipolar transistor (HBT) is provided. The method includes providing a substrate including a collector region; forming a compound base region over the collector region; and forming an emitter region over the compound base region including forming a first emitter layer within the emitter region and doping the first emitter layer with a pre-determined percentage of at least one element associated with the compound base region. In one implementation, an emitter region is formed including multiple emitter layers to enhance a surface recombination surface area within the emitter region.

Abstract: An EEPROM memory transistor having a floating gate. The floating gate is formed using a BiCMOS process and has a first sinker dopant region proximate to a tunnel diode window, and a second sinker dopant region proximate to a coupling capacitor region. An optional third sinker region may be formed proximate to a source junction of the EEPROM memory transistor. Also, a shallow trench isolation (STI) region may be formed between the first and second sinker dopant regions.

Abstract: The present invention is an electronic memory cell and a method for the cell's fabrication comprising a The first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.

Abstract: A method, and a resulting device, for fabricating a heterojunction bipolar transistor (HBT). HBT devices have a high transconductance typical of bipolar devices and are additionally capable of high-power operation. To achieve the aforementioned characteristics, HBT devices are generally of the npn type, preferably with a thin, heavily doped base. The thin, heavily doped base maintains a low base-spreading resistance, leading to a high maximum oscillation frequency. In order to maintain a high doping concentration while minimizing outdiffusion of the dopant material, carbon is remotely doped into the base region. Details of the carbon dopant techniques and procedures are described with respect to fabrication of an exemplary HBT device.

Abstract: The present invention is an electronic memory cell and a method for the cell's fabrication comprising a first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.

Abstract: An EEPROM memory transistor having a floating gate. The floating gate is formed using a BiCMOS process and has a first sinker dopant region proximate to a tunnel diode window, and a second sinker dopant region proximate to a coupling capacitor region. An optional third sinker region may be formed proximate to a source junction of the EEPROM memory transistor. Also, a shallow trench isolation (STI) region may be formed between the first and second sinker dopant regions.

Abstract: The present invention is an electronic memory cell and a method for the cell's fabrication comprising a first transistor configured to be coupled to a bit line. The first transistor has an essentially zero voltage drop when activated and is configured to control an operation of the memory cell. A second transistor is configured to operate as a memory transistor and is coupled to the first transistor. The second transistor is further configured to be programmable with a voltage about equal to a voltage on the bit line.

Abstract: A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.

Abstract: A method of forming ROM transistor memory cell including not forming lightly doped regions in the semiconductor substrate for some of the memory cells so as to form one type of memory cell and forming the lightly doped regions in another type of memory cell.