Abstract: Novel electrically-isolated high-voltage sensors are provided which have low power dissipation. The sensors are formed of a circuit comprising first and second portions separated by an electrical isolation boundary with the first portion used for high-voltage, and the second portion for low-voltage. While they are decoupled electrically, they are coupled both optically and magnetically. The first portion comprises an LED which generates an optical signal corresponding to a high-voltage signal across the electrical-isolation boundary. The second portion comprises a photodiode which receives the optical signal emitted from the LED and outputs a corresponding low-voltage electrical signal.

Abstract: Novel electrically-isolated high-voltage sensors are provided which have low power dissipation. The sensors are formed of a circuit comprising first and second portions separated by an electrical isolation boundary with the first portion used for high-voltage, and the second portion for low-voltage. While they are decoupled electrically, they are coupled both optically and magnetically. The first portion comprises an LED which generates an optical signal corresponding to a high-voltage signal across the electrical-isolation boundary. The second portion comprises a photodiode which receives the optical signal emitted from the LED and outputs a corresponding low-voltage electrical signal.

Abstract: Novel voltage converter circuits are provided which step-up very low DC input voltages to higher voltages capable of supporting low-power loads. According to embodiments, a voltage step-up power converter circuit may be formed of an oscillator sub-circuit which receives a DC voltage and outputs an AC voltage; a voltage doubler sub-circuit which receives the AC voltage and outputs an augmented AC voltage; and a voltage step-up converter sub-circuit which receives the augmented AC voltage, as a control voltage, and the initial DC voltage and outputs a voltage which is more than the initial DC voltage. These circuits allow electrical energy to be harvested from very low voltage sources and to convert it as efficiently as possible to run a load.

Abstract: A circuit comprising a first device (e.g., a high voltage MOSFET) coupled in series with a second device (e.g., a low voltage MOSFET or HEMT). The first device comprises a body diode. Additionally, the circuit comprises a diode coupled across the pair of devices. The diode is arranged antiparallel to the first device. In one exemplary embodiment, the first device is a SiC MOSFET and the second device is a Si MOSFET or GaN HEMT.

Abstract: A power module including a plurality of power die layers including power electronic components; a plurality of heat sink components operatively connected to multiple sides of each power electronic component; a plurality of electrically conductive layers contacting the plurality of heat sink components, wherein a power die layer and an electrically conductive layer sequentially alternate to form a stacked structure such that both ends of the stacked structure includes an end electrically conductive layer. A cooling path is integrated with each layer in the stacked structure. A housing unit houses the stacked structure. The power electronic components may include heat-producing electronic devices. The cooling path may accommodate any of a fluid and solid to liquid phase change materials. The fluid comes into direct contact with the power die layers, heat sink components, and electrically conductive layers.

Abstract: A power module including a plurality of power die layers including power electronic components; a plurality of heat sink components operatively connected to multiple sides of each power electronic component; a plurality of electrically conductive layers contacting the plurality of heat sink components, wherein a power die layer and an electrically conductive layer sequentially alternate to form a stacked structure such that both ends of the stacked structure includes an end electrically conductive layer. A cooling path is integrated with each layer in the stacked structure. A housing unit houses the stacked structure. The power electronic components may include heat-producing electronic devices. The cooling path may accommodate any of a fluid and solid to liquid phase change materials. The fluid comes into direct contact with the power die layers, heat sink components, and electrically conductive layers.

Abstract: Various solid-state circuit breakers and related circuits are presented herein. These include, among other things, a common node bidirectional solid-state circuit breaker (BDSSCB) having diodes connected between terminals of its switches, a shunt voltage actuated driver (SVAD) circuit for use with a BDSSCB, a SVAD circuit for use with a unidirectional solid-state circuit breaker (UDSSCB), a bipolar current actuated driver (BCAD) for use with a BDSSCB, and a multi-directional solid-state circuit breaker (MDSSCB).

Abstract: A solid state circuit breaker includes a first terminal; a second terminal; a first wide-band gap field effect transistor coupled to the first terminal; a second wide-band gap field effect transistor coupled to the second terminal, wherein the first wide-band gap field effect transistor and the second wide-band gap field effect transistor are common-source connected to one another; and a bi-directional snubber device coupled to the first wide-band gap field effect transistor and the second wide-band gap field effect transistor. Such a solid state circuit breaker may also include a gate drive circuit coupled to the first wide-band gap field effect transistor and the second wide-band gap field effect transistor, where the gate drive circuit may comprise a voltage regulation stage and a drive stage.