Patents by Inventor Damian Whitney

Damian Whitney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7470617
    Abstract: In one embodiment, the present invention includes a method for depositing a barrier layer on a substrate having a trench, depositing a liner layer on the barrier layer that includes a surface oxide, electrolessly depositing a copper seed layer on the liner layer, where the surface oxide is reduced in-situ in an electroless bath, depositing a bulk metal layer on the copper seed layer. Other embodiments are described and claimed.
    Type: Grant
    Filed: March 1, 2007
    Date of Patent: December 30, 2008
    Assignee: Intel Corporation
    Inventors: Ramanan Chebiam, Chin-Chang Cheng, Damian Whitney, Harsono Simka
  • Publication number: 20080213994
    Abstract: In one embodiment, the present invention includes a method for depositing a barrier layer on a substrate having a trench, depositing a liner layer on the barrier layer that includes a surface oxide, electrolessly depositing a copper seed layer on the liner layer, where the surface oxide is reduced in-situ in an electroless bath, depositing a bulk metal layer on the copper seed layer. Other embodiments are described and claimed.
    Type: Application
    Filed: March 1, 2007
    Publication date: September 4, 2008
    Inventors: Ramanan Chebiam, Chin-Chang Cheng, Damian Whitney, Harsono Simka