Abstract: Improving storage device performance including initiating, on a storage device, execution of a rehabilitative action from a set of rehabilitative actions that can be performed on the storage device; determining that the storage device is operating outside of a defined range of expected operating parameters after the rehabilitative action has been executed; and initiating execution of a higher level rehabilitative action responsive to determining that the higher level rehabilitative action exists.

Abstract: An indication is received from a storage device that an attempt to read a portion of data from a block of the storage device has failed. A command is transmitted to the storage device to perform a scan on data stored at the block comprising the portion of data to acquire failure information associated with a plurality of subsets of the data stored at the block. The failure information associated with the plurality of subsets of the data stored at the block is received from the storage device.

Abstract: Failure information associated with a plurality of blocks of a solid-state storage device of a plurality of solid-state storage devices is received. One or more blocks of the plurality of blocks storing uncorrectable data are identified based on the received failure information. A partial deallocation of the one or more blocks of the plurality of blocks is issued, the partial deallocation indicating that the one or more blocks store uncorrectable data. A remedial action associated with the one or more blocks of the plurality of blocks is performed.

Abstract: An indication is received from a storage device that an attempt to read a portion of data from a block of the storage device has failed. A command is transmitted to the storage device to perform a scan on data stored at the block comprising the portion of data to acquire failure information associated with a plurality of subsets of the data stored at the block. The failure information associated with the plurality of subsets of the data stored at the block is received from the storage device.

Abstract: Improving storage device performance including initiating, on a storage device, execution of a rehabilitative action from a set of rehabilitative actions that can be performed on the storage device; determining that the storage device is operating outside of a defined range of expected operating parameters after the rehabilitative action has been executed; and initiating execution of a higher level rehabilitative action responsive to determining that the higher level rehabilitative action exists.

Abstract: Rehabilitating storage devices in a storage array that includes a plurality of storage devices, including: receiving a request to rehabilitate a storage device that is operating outside of a defined range of expected operating parameters; selecting, from a hierarchy of rehabilitative actions that can be performed on the storage device, a rehabilitative action to perform on a storage device in dependence upon information describing a number of times that one or more of the rehabilitative actions have been performed on the storage device; and initiating execution of the selected rehabilitative action.

Abstract: Failure information associated with a plurality of blocks of a solid-state storage device of a plurality of solid-state storage devices is received. One or more blocks of the plurality of blocks storing uncorrectable data are identified based on the received failure information. A partial deallocation of the one or more blocks of the plurality of blocks is issued, the partial deallocation indicating that the one or more blocks store uncorrectable data. A remedial action associated with the one or more blocks of the plurality of blocks is performed.

Abstract: Failure information associated with a plurality of blocks of a solid-state storage device of a plurality of solid-state storage devices is received. One or more blocks of the plurality of blocks storing uncorrectable data are identified based on the received failure information. A partial deallocation of the one or more blocks of the plurality of blocks is issued, the partial deallocation indicating that the one or more blocks store uncorrectable data. A remedial action associated with the one or more blocks of the plurality of blocks is performed.

Abstract: Failure information associated with a plurality of blocks of a solid-state storage device of a plurality of solid-state storage devices is received. One or more blocks of the plurality of blocks storing uncorrectable data are identified based on the received failure information. A partial deallocation of the one or more blocks of the plurality of blocks is issued, the partial deallocation indicating that the one or more blocks store uncorrectable data. A remedial action associated with the one or more blocks of the plurality of blocks is performed.

Abstract: Rehabilitating storage devices in a storage array that includes a plurality of storage devices, including: receiving a request to rehabilitate a storage device that is operating outside of a defined range of expected operating parameters; selecting, from a hierarchy of rehabilitative actions that can be performed on the storage device, a rehabilitative action to perform on a storage device in dependence upon information describing a number of times that one or more of the rehabilitative actions have been performed on the storage device; and initiating execution of the selected rehabilitative action.

Abstract: An indication is received from a storage device that an attempt to read a portion of data from a block of the storage device has failed. A command is transmitted to the storage device to perform a scan on data stored at the block comprising the portion of data to acquire failure information associated with a plurality of subsets of the data stored at the block. The failure information associated with the plurality of subsets of the data stored at the block is received from the storage device.

Abstract: In a storage system that includes a plurality of storage devices, data protection may include, for each of the plurality of storage devices: encrypting data of the storage device using the device key for the storage device; and encrypting the device key for the storage device using a master secret; generating a plurality of shares from the master secret; and storing the encrypted data, the encrypted device key, and a separate share of the plurality of shares in each storage device.

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

Abstract: Rehabilitating storage devices in a storage array that includes a plurality of storage devices, including: receiving a request to rehabilitate a storage device that is operating outside of a defined range of expected operating parameters; selecting, from a hierarchy of rehabilitative actions that can be performed on the storage device, a rehabilitative action to perform on a storage device in dependence upon information describing a number of times that one or more of the rehabilitative actions have been performed on the storage device; and initiating execution of the selected rehabilitative action.

Abstract: In a flash memory, redundant columns are used alternatively as replacement columns for replacing bad columns or to provide additional redundancy for ECC encoding. Locations of bad columns are indicated to a soft-input ECC decoder so that data bits from bad columns are treated as having a lower reliability than data bits from other columns.

Abstract: Systems and methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

Abstract: Methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects are described. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data written into memory cells associated with one or more contiguous word lines within a memory block that does not include a bad word line. In some cases, firmware associated with a NAND flash memory device may identify one or more data fragments based on the location of bad word lines within a memory block. A word line defect may be considered a benign defect if the defect does not prevent memory cells connected to other word lines within a memory block from being programmed and/or read reliably.

Abstract: Systems and methods for sequentially writing data to a memory device such as a universal serial bus (USB) memory device are disclosed. A system controller of a memory device including a first die and a second die, each of the first die and the second die including a plurality of pages, writes a first portion of a set of data to a lower page of a second die. The system controller then writes a second portion of the set of data to an upper page of the second die after writing the first portion of the set of data to the lower page of the second die.

Abstract: Systems and methods for sequentially writing data to a memory device such as a universal serial bus (USB) memory device are disclosed. A system controller of a memory device including a first die and a second die, each of the first die and the second die including a plurality of pages, writes a first portion of a set of data to a lower page of a second die. The system controller then writes a second portion of the set of data to an upper page of the second die after writing the first portion of the set of data to the lower page of the second die.