Abstract: An integrated circuit includes a transistor having a control electrode and a load current path to activate and to deactivate a load current path between a first terminal and a second terminal. A diode is in parallel with the load current path of the transistor. The integrated circuit includes a detector circuit to generate a control signal depending on a voltage between the first terminal and the second terminal. The integrated circuit includes a driver circuit having a main branch and a first feedforward branch. The main branch includes circuit components to generate a control voltage for the control electrode of the transistor in accordance with the control signal, and the feedforward branch comprises circuit components to generate a charging current or, alternatively, a discharging current as a reaction to a slope of the control signal, the current charging or discharging, respectively, the control electrode of the transistor.

Abstract: An integrated circuit includes a transistor having a control electrode and a load current path to activate and to deactivate a load current path between a first terminal and a second terminal. A diode is in parallel with the load current path of the transistor. The integrated circuit includes a detector circuit to generate a control signal depending on a voltage between the first terminal and the second terminal. The integrated circuit includes a driver circuit having a main branch and a first feedforward branch. The main branch includes circuit components to generate a control voltage for the control electrode of the transistor in accordance with the control signal, and the feedforward branch comprises circuit components to generate a charging current or, alternatively, a discharging current as a reaction to a slope of the control signal, the current charging or discharging, respectively, the control electrode of the transistor.

Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. The rectifier device further includes a controllable resistance circuit that is electrically connected between the semiconductor body and a first well region of one or more well regions and configured to provide a resistive current path between the semiconductor body and the first well region. The resistance of the current path is dependent on an instantaneous level of an alternating input voltage.

Abstract: A rectifier device includes a first transistor having a load current path and a diode connected in parallel to the load current path between an anode terminal and a cathode terminal. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. A control circuit is coupled to a gate terminal of the first transistor and configured to switch the first transistor on for an on-time period, during which the diode is forward biased. A clamping circuit is coupled to the gate terminal of the first transistor and configured to at least partly switch on the first transistor while the diode is reverse biased and when the level of the alternating input voltage reaches a clamping voltage. The clamping circuit includes an additional circuit coupled between the cathode terminal and the gate terminal and configured to provide a voltage dependent on a load current.

Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thereby, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is parallel to the load current path. An alternating input voltage is applied between the anode terminal and the cathode terminal during operation of the rectifier device.

Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thereby, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is parallel to the load current path. An alternating input voltage is applied between the anode terminal and the cathode terminal during operation of the rectifier device.

Abstract: A rectifier device is described herein. In accordance with one embodiment, the rectifier device includes a semiconductor body doped with dopants of a first doping type and one or more well regions arranged in the semiconductor body and doped with dopants of a second doping type. Thus, the one or more well regions and the surrounding semiconductor body form a pn-junction. The rectifier device includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode, which is connected parallel to the load current path. During operation, an alternating input voltage is applied between the anode terminal and the cathode terminal. The rectifier device includes a control circuit that is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. The first MOS transistor and the diode are integrated in the semiconductor body, and the control circuit is at least partly arranged in the one or more well regions.

Abstract: A rectifier device includes a first transistor having a load current path and a diode connected in parallel to the load current path between an anode terminal and a cathode terminal. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. A control circuit is coupled to a gate terminal of the first transistor and configured to switch the first transistor on for an on-time period, during which the diode is forward biased. A clamping circuit is coupled to the gate terminal of the first transistor and configured to at least partly switch on the first transistor while the diode is reverse biased and when the level of the alternating input voltage reaches a clamping voltage. The clamping circuit includes an additional circuit coupled between the cathode terminal and the gate terminal and configured to provide a voltage dependent on a load current.

Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.

Abstract: In some examples, a rectifier device includes a semiconductor substrate, an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode connected parallel to the load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, a control circuit is coupled to a gate electrode of the first MOS transistor and configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. A gate driver circuit is included in the control circuit and includes a buffer capacitor and a cascade of two or more transistor stages connected between the buffer capacitor and the gate electrode of the first MOS transistor.

Abstract: A rectifier device is described herein. In accordance with one exemplary embodiment, the rectifier device includes a semiconductor substrate doped with dopants of a first doping type and at least one well region arranged in the semiconductor substrate and doped with dopants of a second doping type. Accordingly, the at least one well region and the surrounding semiconductor substrate form a pn-junction. The rectifier device further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode connected parallel to the load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. The rectifier device further includes a control circuit and a biasing circuit. The control circuit is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased.

Abstract: A rectifier device is described herein. According to one example the rectifier device includes a semiconductor substrate, an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode connected parallel to the load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, a control circuit is coupled to a gate electrode of the first MOS transistor and configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. A gate driver circuit is included in the control circuit and includes a buffer capacitor and a cascade of two or more transistor stages connected between the buffer capacitor and the gate electrode of the first MOS transistor.

Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.

Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.

Abstract: A rectifier device is described herein. In accordance with one example, the rectifier device includes a transistor that has a load current path and a diode connected parallel to the load current path. The diode and the load current path are connected between an anode terminal and a cathode terminal; an alternating input voltage is operably applied between the anode terminal and the cathode terminal. A control circuit is coupled to a gate terminal of the transistor and configured to switch the semiconductor switch on for an on-time period, during which the diode is forward biased. Moreover, a clamping circuit is coupled to a gate terminal of the transistor and configured to at least partly switch on the transistor, while the diode is reverse biased and the level of the alternating input voltage reaches a clamping voltage.

Abstract: A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first MOS transistor and a diode that is connected parallel to a load current path. An alternating input voltage is operably applied between the anode terminal and the cathode terminal. Further, the rectifier includes a control circuit that is configured to switch the first MOS transistor on for an on-time period, during which the diode is forward biased. The first MOS transistor, the diode, and the control circuit are integrated in the semiconductor substrate.

Abstract: A rectifier device is described herein. In accordance with one example, the rectifier includes a first MOS transistor, which has a load current path and a diode connected parallel to the load current path, wherein an alternating input voltage is operably applied across the load current path and the diode. The rectifier device further includes a control circuit that is configured to switch on the first MOS transistor for an on-time period, during which the diode is forward biased. A stand-by detection circuit includes a cycle detection circuit configured to detect cycles of the alternating input voltage and a timer that is coupled to the cycle detection circuit. The timer is configured to be reset by the cycle detection circuit upon detection of a cycle of the alternating input voltage, and to disconnect a supply line of the control circuit unless reset before a maximum time span has elapsed.