Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area of the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

Abstract: The invention relates to a method for manufacturing a semiconductor-on-insulator structure (10), comprising the following steps: —providing an FD-SOI substrate (1) comprising, successively from its base to its top: a monocrystalline substrate (2) having an electrical resistivity of between 500 ?·cm and 30 k?·cm, an interstitial oxygen content (Oi) of between 20 and 40 old ppma, and having an N- or P-type doping, an electrically insulating layer (3) having a thickness of between 20 nm and 400 nm, a monocrystalline layer (4) having a P-type doping, —heat-treating the FD-SOI substrate (1) at a temperature greater than or equal to 1175° C. for a time greater than or equal to 1 hour in order to form a P-N junction (5) in the substrate. The invention also relates to such a semiconductor-on-insulator structure.

Abstract: A method of manufacturing a substrate for a front-facing image sensor, comprises:—providing a donor substrate comprising a semiconductor layer to be transferred,—providing a semiconductor carrier substrate,—bonding the donor substrate to the carrier substrate, an electrically insulating layer being at the bonding interface,—transferring the semiconductor layer to the carrier substrate,—implanting gaseous ions in the carrier substrate via the transferred semiconductor layer and the electrically insulating layer, and—after the implantation, epitaxially growing an additional semiconductor layer on the transferred semiconductor layer.

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

Abstract: A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

Abstract: A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

Abstract: A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.