Patents by Inventor Damien Salomon

Damien Salomon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said device
    Patent number: 10510535
    Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: December 17, 2019
    Assignees: Aledia, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Universite Grenoble Alpes
    Inventors: Philipe Gilet, Amélie Dussaigne, Damien Salomon, Joel Eymery, Christophe Durand
  • OPTOELECTRONIC DEVICE COMPRISING THREE-DIMENSIONAL SEMICONDUCTOR ELEMENTS, AND METHOD FOR MANUFACTURING SAID DEVICE
    Publication number: 20180211829
    Abstract: The invention relates to a method for manufacturing an optoelectronic device (50) including wire-like, conical, or frustoconical semiconductor elements (20) predominantly comprising a III-V compound. Each semiconductor element extends along an axis and includes a portion (54), the side surfaces (55) of which are covered with a shell (56) including at least one active region (31), wherein the portions are created by continuous growth in a reactor, and wherein the temperature in the reactor varies in an uninterrupted manner from a first temperature value that favors growth of first crystallographic planes perpendicular to said axis, to a second temperature value that is strictly lower than the first temperature value and favors growth of second crystallographic planes parallel to said axis.
    Type: Application
    Filed: July 13, 2016
    Publication date: July 26, 2018
    Applicants: Aledia, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Universite Grenoble Alpes
    Inventors: Philipe Gilet, Amélie Dussaigne, Damien Salomon, Joel Eymery, Christophe Durand
  • Method of selective growth without catalyst on a semiconducting structure
    Patent number: 9117674
    Abstract: A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: August 25, 2015
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Joël Eymery, Damien Salomon, Xiaojun Chen, Christophe Durand
  • METHOD OF SELECTIVE GROWTH WITHOUT CATALYST ON A SEMICONDUCTING STRUCTURE
    Publication number: 20140080290
    Abstract: A method of selective growth without catalyst on a semi-conducting structure. According to the method, which is applicable in electronics in particular: a semi-conducting structure is formed from first gaseous or molecular flows; at a same time or subsequently, at least one second gaseous or molecular flow is added thereto, to selectively in situ grow a dielectric layer on the structure; and then another semi-conducting structure is grown thereon from third gaseous or molecular flows.
    Type: Application
    Filed: April 3, 2012
    Publication date: March 20, 2014
    Applicant: Commissariat a l'energie atomique et aux ene alt
    Inventors: Joël Eymery, Damien Salomon, Xiaojun Chen, Christophe Durand