Abstract: The present disclosure relates to a heterojunction solar cell, a manufacturing method thereof and a photovoltaic module. The heterojunction solar cell includes a substrate of a first conductivity type, a tunnel layer located on a light-receiving surface of the substrate, and a doped polysilicon layer located on a top surface of the tunnel layer. The doped polysilicon layer has the first conductivity type.

Abstract: A method for preparing a solar cell is provided. The method includes providing a N-type silicon substrate; depositing a tunnel passivation structure on the first surface of the N-type silicon substrate, and then depositing a mask layer on the tunnel passivation structure; cleaning the second surface of the N-type silicon substrate; performing boron diffusion treatment on the cleaned second surface of the N-type silicon substrate and annealing treatment on the tunnel passivation structure in the same environment, so that a first emitter layer is formed on the second surface of the N-type silicon substrate and the tunnel passivation structure is crystallized; performing laser patterning treatment on the first emitter layer to form a second emitter region; depositing a passivation and anti-reflection film; and forming a first electrode and a second electrode.

Abstract: The present disclosure relates to a heterojunction cell and a manufacturing method thereof, a photovoltaic module, and a photovoltaic system. The heterojunction cell includes a substrate, and a first intrinsic amorphous silicon layer, a first silicon material layer, and a first transparent conductive oxide layer stacked in sequence on a first side surface of the substrate. The heterojunction cell further includes: a transparent conductive oxide pattern and an anti-reflection layer that are disposed on different regions of a surface of the first transparent conductive oxide layer facing away from the substrate; and a first metal electrode stacked on a surface of the transparent conductive oxide pattern facing away from the substrate.

Abstract: A solar cell is provided. The solar cell includes a semiconductor substrate. The front surface of the semiconductor substrate has a metal contact area and a non-metal contact area. A first tunneling layer, a first doped polysilicon layer and a first metal electrode are sequentially stacked on the metal contact area. The first metal electrode is electrically connected to the first doped polysilicon layer. A second tunneling layer, a second doped polysilicon layer and a second metal electrode are sequentially stacked on the back surface of the semiconductor substrate.

Abstract: A sugar-based high-strength carbon fiber and a preparation method thereof are provided. The disclosure uses renewable water-soluble sugars as the carbon source, employs water as the solvent, and prepares carbon fiber precursor fibers through wet spinning, followed by pre-carbonization and carbonization treatments so as to achieve the synthesis of carbon fiber.

Abstract: A preparation method of a passivated contact structure includes: forming a tunneling layer on a semiconductor substrate; forming an intrinsic semiconductor layer on the tunneling layer; forming a doped layer containing a dopant on the intrinsic semiconductor layer, and performing an activation treatment on the doped layer to diffuse the dopant in the doped layer into the intrinsic semiconductor layer to form a doped semiconductor layer. The tunneling layer and the doped semiconductor layer form the passivated contact structure.

Abstract: The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting material layer is provided. A first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting material layer covers the textured structure. A passivating contact material layer is formed on each surface of the wafer. The wafer formed with the passivating contact material layer is cut along the thickness direction of the substrate to form a sub-wafer, so as to form a doped conducting layer. The passivating contact material layer is etched to form a passivating contact layer. A first passivation layer is formed on the doped conducting layer, and further covers at least a portion of a cut edge side surface which is a side surface of the sub-wafer formed by cutting the wafer.

Abstract: The present disclosure relates to a solar cell, a method for manufacturing the same, and a photovoltaic module. A method includes: providing a semiconductor substrate; forming a tunnel layer on a surface of the semiconductor substrate; sequentially forming an undoped initial intrinsic material layer and a doped layer including a dopant on a surface of the tunnel layer; the dopant including either an N-type dopant or a P-type dopant; and performing heat treatment on the initial intrinsic material layer and the doped layer to diffuse the dopant in the doped layer to the initial intrinsic material layer and at least partially crystallize the initial intrinsic material layer, so as to convert the initial intrinsic material layer into a doped passivation layer.

Abstract: A solar cell includes a semiconducting substrate, a first emitter, an insulating layer, and a second emitter. The semiconducting substrate includes a first surface and a second surface, and includes a first region and a second region. The first region includes a first sub-region and a second sub-region. The first sub-region is in contact with the second region. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is disposed on the first surface and in the first region. The insulating layer is disposed on the first emitter and in the first sub-region. The second emitter is disposed on the first surface. The second emitter includes a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the second region. The second sub-emitter is disposed on the insulating layer. Electrical conduction exists between the first emitter and the first sub-emitter.

Abstract: A solar cell structure, a method for preparing a solar cell, and a mask plate. The solar cell structure includes a substrate, a first doped layer, and a plurality of first transparent conductive layers. The first doped layer is disposed on a surface of the substrate. The plurality of first transparent conductive layers are spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers.

Abstract: This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell.

Abstract: A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a semiconductor substrate, a first substrate doped layer, a second substrate doped layer, a first passivation layer, and a first doped semiconductor layer. The semiconductor substrate includes a first surface, and the first surface includes a first region and a second region adjacent to the first region along a first direction. The first substrate doped layer is located in the first region. The second substrate doped layer is located in the second region, and the first substrate doped layer is connected to the second substrate doped layer. The first passivation layer is located on a side of the second substrate doped layer away from the semiconductor substrate. The first doped semiconductor layer is located on a side of the first passivation layer away from the semiconductor substrate.

Abstract: The present disclosure relates to the field of solar cell technologies. The present disclosure provides a solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate; a tunnel oxide layer stacked on a surface of the substrate, the tunnel oxide layer being an oxide layer including at least a silicon element and an oxygen element; and a polysilicon doped conductive layer stacked on a side of the tunnel oxide layer facing away from the substrate. The tunnel oxide layer is doped with a carbon element and a hydrogen element.

Abstract: The present application provides a large-area perovskite layer and a preparation method thereof. The preparation method includes: dissolving raw materials of a perovskite in an ionic liquid or in a mixture of the ionic liquid and an organic solvent, thereby forming a perovskite precursor, and coating the perovskite precursor onto a surface of a crystalline silicon bottom cell, thereby forming the perovskite layer.

Abstract: The present disclosure relates to a heterojunction cell and a manufacturing method thereof, a photovoltaic module and a photovoltaic system. The heterojunction cell includes: a substrate; a first intrinsic silicon layer, a first doped layer, and a first transparent conductive layer that are sequentially stacked on a first surface; and a second intrinsic silicon layer, a second doped layer, and a second transparent conductive layer that are sequentially stacked on a second surface. A doping type of the first doped layer is opposite to a doping type of the second doped layer. The first transparent conductive layer covers at least part of the first surface. The second transparent conductive layer covers the second surface and at least part of the plurality of lateral surfaces. An edge of the first transparent conductive layer is spaced apart from an edge of the second transparent conductive layer, to define an isolation region therebetween.

Abstract: A method for preparing a solar cell includes providing a substrate with a first conducting layer, the substrate including a first surface and a second surface opposite to each other in a thickness direction of the substrate, the first conducting layer being formed on the first surface; forming a first electrode pattern on a side of the first conducting layer away from the substrate, the first electrode pattern being electrically connected to the first conducting layer, the first electrode pattern including a first soldering pattern, the first soldering pattern being configured for soldering to one or more first bus ribbons; forming a first dielectric layer on a side of the first electrode pattern away from the substrate, and covering the first electrode pattern with the first dielectric layer; and removing a portion of the first dielectric layer corresponding to the first soldering pattern, and exposing the first soldering pattern.

Abstract: A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.

Abstract: The solar cell includes a substrate, multiple conductive layers and a electrode structure. Two adjacent conductive layers having opposite electric polarities are electrically insulated from each other. The electrode structure includes multiple gate electrodes and multiple gate lines. Gate electrodes with opposite electric polarities are arranged at intervals in a second direction, respective gate lines with opposite electric polarities are arranged at intervals in the first direction, and the multiple gate lines are arranged on respective conductive layers with a same electric polarity. A gate line of the multiple gate lines intersects with a gate electrode of the multiple gate electrodes that has opposite electric polarities at an intersection where the gate line is disconnected.

Abstract: The present disclosure provides a back-contact cell, a method for preparing the same, and a back-contact cell module. The back-contact cell includes: a silicon substrate, wherein the silicon substrate includes a substrate front side close to sunlight and a substrate back side away from sunlight; a first doping region, an isolation region, and a second doping region, located on the substrate back side, wherein the first doping region and the second doping region have different doping elements, and the isolation region is located between the first doping region and the second doping region on the substrate back side; a front passivation anti-reflection layer located on the substrate front side; and a protective layer located on at least part of the front passivation anti-reflection layer, wherein the protective layer includes resin material.

Abstract: The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.