Patents by Inventor Daming Chen

Daming Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12641889
    Abstract: A solar cell includes a semiconducting substrate, a first emitter, an insulating layer, and a second emitter. The semiconducting substrate includes a first surface and a second surface, and includes a first region and a second region. The first region includes a first sub-region and a second sub-region. The first sub-region is in contact with the second region. The first direction is perpendicular to the thickness direction of the semiconducting substrate. The first emitter is disposed on the first surface and in the first region. The insulating layer is disposed on the first emitter and in the first sub-region. The second emitter is disposed on the first surface. The second emitter includes a first sub-emitter and a second sub-emitter. The first sub-emitter is located on the second region. The second sub-emitter is disposed on the insulating layer. Electrical conduction exists between the first emitter and the first sub-emitter.
    Type: Grant
    Filed: August 20, 2024
    Date of Patent: May 26, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Daming Chen, Wei Liu, Yunyun Hu, Yifeng Chen
  • Patent number: 12622090
    Abstract: A solar cell structure, a method for preparing a solar cell, and a mask plate. The solar cell structure includes a substrate, a first doped layer, and a plurality of first transparent conductive layers. The first doped layer is disposed on a surface of the substrate. The plurality of first transparent conductive layers are spaced apart from each other and disposed on a surface of the first doped layer away from the substrate. A region to be cut of the solar cell structure is located between two adjacent first transparent conductive layers.
    Type: Grant
    Filed: June 27, 2024
    Date of Patent: May 5, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Hongwei Li, Guangtao Yang, Daming Chen, Yifeng Chen
  • Patent number: 12615850
    Abstract: This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell.
    Type: Grant
    Filed: July 21, 2023
    Date of Patent: April 28, 2026
    Assignee: Trina Solar Co., Ltd
    Inventors: Zibo Meng, Hongwei Li, Guangtao Yang, Xueling Zhang, Daming Chen
  • Patent number: 12610653
    Abstract: A solar cell, a preparation method thereof, and a photovoltaic module. The solar cell includes a semiconductor substrate, a first substrate doped layer, a second substrate doped layer, a first passivation layer, and a first doped semiconductor layer. The semiconductor substrate includes a first surface, and the first surface includes a first region and a second region adjacent to the first region along a first direction. The first substrate doped layer is located in the first region. The second substrate doped layer is located in the second region, and the first substrate doped layer is connected to the second substrate doped layer. The first passivation layer is located on a side of the second substrate doped layer away from the semiconductor substrate. The first doped semiconductor layer is located on a side of the first passivation layer away from the semiconductor substrate.
    Type: Grant
    Filed: June 28, 2024
    Date of Patent: April 21, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Yunyun Hu, Wei Liu, Daming Chen
  • Patent number: 12610652
    Abstract: The present disclosure relates to the field of solar cell technologies. The present disclosure provides a solar cell and a manufacturing method therefor, a photovoltaic module, and a photovoltaic system. The solar cell includes: a substrate; a tunnel oxide layer stacked on a surface of the substrate, the tunnel oxide layer being an oxide layer including at least a silicon element and an oxygen element; and a polysilicon doped conductive layer stacked on a side of the tunnel oxide layer facing away from the substrate. The tunnel oxide layer is doped with a carbon element and a hydrogen element.
    Type: Grant
    Filed: August 16, 2024
    Date of Patent: April 21, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Chengfa Liu, Daming Chen, Hong Chen, Yifeng Chen
  • Patent number: 12604656
    Abstract: The present application provides a large-area perovskite layer and a preparation method thereof. The preparation method includes: dissolving raw materials of a perovskite in an ionic liquid or in a mixture of the ionic liquid and an organic solvent, thereby forming a perovskite precursor, and coating the perovskite precursor onto a surface of a crystalline silicon bottom cell, thereby forming the perovskite layer.
    Type: Grant
    Filed: September 27, 2022
    Date of Patent: April 14, 2026
    Assignee: TRINA SOLAR CO., LTD
    Inventors: Rui Xia, Yiqi Chen, Yao Wang, Yang Zou, Chengfa Liu, Xueling Zhang, Daming Chen, Yifeng Chen
  • Patent number: 12575193
    Abstract: The present disclosure relates to a heterojunction cell and a manufacturing method thereof, a photovoltaic module and a photovoltaic system. The heterojunction cell includes: a substrate; a first intrinsic silicon layer, a first doped layer, and a first transparent conductive layer that are sequentially stacked on a first surface; and a second intrinsic silicon layer, a second doped layer, and a second transparent conductive layer that are sequentially stacked on a second surface. A doping type of the first doped layer is opposite to a doping type of the second doped layer. The first transparent conductive layer covers at least part of the first surface. The second transparent conductive layer covers the second surface and at least part of the plurality of lateral surfaces. An edge of the first transparent conductive layer is spaced apart from an edge of the second transparent conductive layer, to define an isolation region therebetween.
    Type: Grant
    Filed: June 26, 2024
    Date of Patent: March 10, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Guangtao Yang, Daming Chen, Yifeng Chen, Hongwei Li
  • Patent number: 12575214
    Abstract: A method for preparing a solar cell includes providing a substrate with a first conducting layer, the substrate including a first surface and a second surface opposite to each other in a thickness direction of the substrate, the first conducting layer being formed on the first surface; forming a first electrode pattern on a side of the first conducting layer away from the substrate, the first electrode pattern being electrically connected to the first conducting layer, the first electrode pattern including a first soldering pattern, the first soldering pattern being configured for soldering to one or more first bus ribbons; forming a first dielectric layer on a side of the first electrode pattern away from the substrate, and covering the first electrode pattern with the first dielectric layer; and removing a portion of the first dielectric layer corresponding to the first soldering pattern, and exposing the first soldering pattern.
    Type: Grant
    Filed: August 20, 2024
    Date of Patent: March 10, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Daming Chen, Kuiyi Wu, Zigang Wang, Yifeng Chen
  • Patent number: 12575218
    Abstract: A solar cell, a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell includes a substrate and a first tunnel oxide layer and a passivation medium layer sequentially stacked on a first surface of the substrate. The first tunnel oxide layer is at least partially in contact with the first surface. The passivation medium layer includes at least a transparent conductive oxide layer.
    Type: Grant
    Filed: August 16, 2024
    Date of Patent: March 10, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Daming Chen, Wei Liu, Yifeng Chen, Dongyun Lv
  • Patent number: 12568713
    Abstract: The solar cell includes a substrate, multiple conductive layers and a electrode structure. Two adjacent conductive layers having opposite electric polarities are electrically insulated from each other. The electrode structure includes multiple gate electrodes and multiple gate lines. Gate electrodes with opposite electric polarities are arranged at intervals in a second direction, respective gate lines with opposite electric polarities are arranged at intervals in the first direction, and the multiple gate lines are arranged on respective conductive layers with a same electric polarity. A gate line of the multiple gate lines intersects with a gate electrode of the multiple gate electrodes that has opposite electric polarities at an intersection where the gate line is disconnected.
    Type: Grant
    Filed: May 24, 2024
    Date of Patent: March 3, 2026
    Assignee: TRINA SOLAR CO., LTD.
    Inventors: Yunyun Hu, Guangtao Yang, Daming Chen, Yifeng Chen
  • Publication number: 20260059897
    Abstract: The present disclosure provides a back-contact cell, a method for preparing the same, and a back-contact cell module. The back-contact cell includes: a silicon substrate, wherein the silicon substrate includes a substrate front side close to sunlight and a substrate back side away from sunlight; a first doping region, an isolation region, and a second doping region, located on the substrate back side, wherein the first doping region and the second doping region have different doping elements, and the isolation region is located between the first doping region and the second doping region on the substrate back side; a front passivation anti-reflection layer located on the substrate front side; and a protective layer located on at least part of the front passivation anti-reflection layer, wherein the protective layer includes resin material.
    Type: Application
    Filed: January 17, 2025
    Publication date: February 26, 2026
    Inventors: Wei Liu, Zhiyuan Liu, Daming Chen
  • Publication number: 20260052796
    Abstract: The present disclosure provides a solar cell and a method for preparing the same. The solar cell includes a semiconductor substrate, a first heavily doped layer, a front electrode, an emitter layer, and a back electrode. The first heavily doped layer and the front electrode are disposed on the front surface of the semiconductor substrate. The first heavily doped layer is disposed between the front electrode and the semiconductor substrate. The emitter layer is disposed between the back electrode and the semiconductor substrate.
    Type: Application
    Filed: August 3, 2023
    Publication date: February 19, 2026
    Applicant: Trina Solar Co., Ltd.
    Inventors: Yao WANG, Daming CHEN
  • Patent number: 12538605
    Abstract: This present application provides a back contact solar cell and solar cell module, comprising: a substrate, provided with a substrate front surface and a substrate back surface opposite to each other, wherein the substrate front surface is close to a main-light-receiving surface of the cell, and the substrate back surface is close to a non-main-light-receiving surface of the cell; P-type polarity region, including a first doped semiconductor layer; N-type polarity region, including a second doped semiconductor layer, the N-type polarity region and the P-type polarity region are alternately located on side of the substrate back surface, wherein, a thickness of the second doped semiconductor layer along a normal direction of the cell is smaller than a thickness of the first doped semiconductor layer along the normal direction; and an isolation region, located between each two adjacent N-type polarity region and P-type polarity region.
    Type: Grant
    Filed: September 25, 2024
    Date of Patent: January 27, 2026
    Assignee: Trina Solar Co., Ltd
    Inventors: Yunyun Hu, Jianpeng Zong, Binglun Han, Wei Liu, Daming Chen
  • Patent number: 12538607
    Abstract: A solar cell and preparation method. The solar cell includes silicon substrate having first or second polarity, where the substrate includes first and second sides opposite to each other; first passivation structure on first side of the substrate, a portion of first structure farthest from the substrate having first polarity and a position where first structure is located being first electrode region; second passivation structure on a side of first structure away from the substrate, a portion of second structure farthest from the substrate having second polarity and a position where second structure is located being second electrode region, second and first electrode regions are not overlapped and second structure has a process temperature lower than first structure; and first electrode in first region on a side of second structure away from the substrate and second electrode in second region on a side of second structure away from the substrate.
    Type: Grant
    Filed: June 12, 2023
    Date of Patent: January 27, 2026
    Assignee: Trina Solar Co., Ltd.
    Inventors: Hongwei Li, Zibo Meng, Tingting Huo, Guangtao Yang, Xueling Zhang, Daming Chen
  • Publication number: 20260026130
    Abstract: The present application relates to a solar cell and a method for manufacturing same, a photovoltaic module, and a photovoltaic system. The solar cell includes a substrate, a doped conducting layer, a first passivation layer, a passivating contact layer, and a second passivation layer. At least a first surface and a portion of a first side surface of the substrate include a textured structure. The doped conducting layer is disposed at least on the first surface and the first side surface to cover the textured structure. The first passivation layer is stacked on the doped conducting layer and covers the first surface and the first side surface to cover the doped conducting layer. The passivating contact layer is disposed on a second surface of the substrate. The second passivation layer is stacked on the passivating contact layer and covers the second surface to cover the passivating contact layer.
    Type: Application
    Filed: September 30, 2025
    Publication date: January 22, 2026
    Applicant: Trina Solar Co., Ltd.
    Inventors: Chengfa LIU, Hong CHEN, Daming CHEN, Yifeng CHEN
  • Publication number: 20260026133
    Abstract: The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system.
    Type: Application
    Filed: September 29, 2025
    Publication date: January 22, 2026
    Applicant: Trina Solar Co., Ltd.
    Inventors: Guangtao YANG, Yifeng CHEN, Daming CHEN, Yunyun HU
  • Publication number: 20260026132
    Abstract: The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system.
    Type: Application
    Filed: September 29, 2025
    Publication date: January 22, 2026
    Applicant: Trina Solar Co., Ltd.
    Inventors: Guangtao YANG, Yifeng CHEN, Daming CHEN, Yunyun HU
  • Patent number: 12532570
    Abstract: This disclosure provides back contact cell and solar cell module.
    Type: Grant
    Filed: July 31, 2024
    Date of Patent: January 20, 2026
    Assignee: Trina Solar Co., Ltd
    Inventors: Yunyun Hu, Wei Liu, Daming Chen, Guangtao Yang
  • Publication number: 20260020375
    Abstract: A solar cell comprises a substrate having an opposite first surface and a second surface, and the second surface has a first regions and a second regions adjacent in the first direction; a first passivation layer located on the first surface; a first doped layer and a tunnel oxide layer sequentially stacked in the first region; a first insulating layer located on a surface of the first doped layer away from the substrate; a second passivation layer located in the second region and extending to a surface of the first insulating layer away from the substrate; a second doped layer located on a surface of the second passivation layer away from the substrate, and a second insulating layer located between the second passivation layer and the first doped layer, the tunnel oxide layer in the first direction, a surface of the second insulating layer away from the substrate contacting with the first insulating layer.
    Type: Application
    Filed: September 16, 2025
    Publication date: January 15, 2026
    Inventors: Guangtao Yang, Daming Chen, Yifeng Chen
  • Patent number: 12520619
    Abstract: The present disclosure provides an interdigitated back contact cell and a manufacturing method thereof. The interdigitated back contact cell includes: a substrate including a front side and a back side, the front side being arranged opposite to the back side; where, along a first direction, first functional regions and second functional regions are alternately arranged on the back side of the substrate; an isolation region is arranged between every adjacent first functional region and second functional region; and the first emitter is spatially isolated from one adjacent second emitter by a corresponding isolation region; and the first diffusion layer is in contact with at least one adjacent second diffusion layer in a corresponding region of a corresponding isolation region. The interdigitated back contact cell provided by the present disclosure has a lower reverse breakdown voltage, a high component reliability, and a high cell efficiency.
    Type: Grant
    Filed: July 22, 2024
    Date of Patent: January 6, 2026
    Assignee: Trina Solar Co., Ltd.
    Inventors: Wei Liu, Yunyun Hu, Zhiyuan Liu, Daming Chen