Patents by Inventor Damir Asoli
Damir Asoli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9947831Abstract: A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.Type: GrantFiled: April 21, 2017Date of Patent: April 17, 2018Assignee: QUNANO ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9818830Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: July 28, 2016Date of Patent: November 14, 2017Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20170229613Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: April 21, 2017Publication date: August 10, 2017Inventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9660136Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: April 14, 2015Date of Patent: May 23, 2017Assignee: QUNANO ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Publication number: 20160336411Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: July 28, 2016Publication date: November 17, 2016Inventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Patent number: 9419086Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: March 27, 2015Date of Patent: August 16, 2016Assignee: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20160155870Abstract: A solar cell structure (1) and a method of its fabrication, the structure comprising an array of elongated nanowires (2) made in a semiconductor material having a direct band gap. Each nanowire (2) has at least a first (3) and a second (4) sections. Said structure comprises a first electrode layer (7) realizing ohmic contact to at least one portion of each first section (3), a second, optically transparent electrode layer (8) realizing contact to at least one portion of each second section. Each nanowire (2) comprises a minority carrier barrier element (6) for minimizing recombination of minority carriers at the contact to the second electrode layer (8).Type: ApplicationFiled: June 5, 2014Publication date: June 2, 2016Inventors: Ingvar ÅBERG, Jonas OHLSSON, Damir ASOLI, Nicklas ANTTU
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Publication number: 20150221817Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: April 14, 2015Publication date: August 6, 2015Inventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Publication number: 20150200262Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: March 27, 2015Publication date: July 16, 2015Inventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20150155167Abstract: The invention regards a method of manufacturing a structure adapted to be transferred to a non-crystalline layer. The method comprises the steps of providing a substrate having a crystal orientation, providing a plurality of elongate nanostructures (nanowires) on said substrate, said nanostructures extending from the substrate such that the angle defined by the axis of elongation of each nanostructure and the surface normal of the substrate is smaller than 55 degrees, depositing at least one layer of material such that at least the exposed regions of the substrate are covered by said material, removing the substrate such that the deposited layer becomes lowermost layer and exposing at least the extremity of the respective nanostructure of the plurality of nanostructures. Invention also regards a structure manufactured using said method.Type: ApplicationFiled: June 5, 2013Publication date: June 4, 2015Inventors: Jonas Ohlsson, Lars Samuelson, Jonas Tegenfeldt, Ingvar Aberg, Damir Asoli
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Patent number: 9024338Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: November 7, 2013Date of Patent: May 5, 2015Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi, Jonas Ohlsson, Lars Ivar Samuelson
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Patent number: 9012883Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: GrantFiled: December 21, 2012Date of Patent: April 21, 2015Assignee: Sol Voltaics ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20140175372Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.Type: ApplicationFiled: December 21, 2012Publication date: June 26, 2014Applicant: SOL VOLTAICS ABInventors: Ingvar Åberg, Martin Magnusson, Damir Asoli, Lars Ivar Samuelson, Jonas Ohlsson
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Publication number: 20140061586Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: November 7, 2013Publication date: March 6, 2014Applicant: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Patent number: 8664094Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: October 18, 2012Date of Patent: March 4, 2014Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Patent number: 8309439Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: November 8, 2010Date of Patent: November 13, 2012Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Publication number: 20110143472Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: November 8, 2010Publication date: June 16, 2011Applicant: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Patent number: 7829443Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: January 14, 2008Date of Patent: November 9, 2010Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Publication number: 20100163840Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: ApplicationFiled: January 14, 2008Publication date: July 1, 2010Inventors: Werner Seifert, Damir Asoli, Zhaoxia Bi