Abstract: Various embodiments include an apparatus to supply gases to a tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a chamber of the tool. The manifold body has multiple gas outlet ports. A purge-gas outlet port of the manifold body is directed substantially toward the outlet ports. For each of multiple gases to be input to the POU-valve manifold, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a gas supply and has a separate gas flow path internal to the manifold body and separate from remaining ones of the gas flow paths. The divert valve diverts the gas during a period when the precursor gas is not to be directed into the chamber by the first valve. Other examples are disclosed.

Abstract: A method includes selecting first features to be machined within a first tolerance range, and second features, which are located at least a predetermined distance apart, to be machined within a second tolerance range of a specified dimension for the selected features. The method includes machining, using a cutting attachment of a tool, the first features within the first tolerance range, and when a parameter associated with the tool causing variation in dimension of the first selected features reaches a predetermined threshold, machining, using the cutting attachment, the second selected features within the second tolerance range. In a second method, a mean value of dimensions of the first and second features is less than or equal to a predetermined mean deviation from the specified dimension, and a standard deviation of the dimensions of the first and second features is less than or equal to a predetermined standard deviation.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Various embodiments include an apparatus to supply gases to a tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a chamber of the tool. The manifold body has multiple gas outlet ports. A purge-gas outlet port of the manifold body is directed substantially toward the outlet ports. For each of multiple gases to be input to the POU-valve manifold, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a gas supply and has a separate gas flow path internal to the manifold body and separate from remaining ones of the gas flow paths. The divert valve diverts the gas during a period when the precursor gas is not to be directed into the chamber by the first valve. Other examples are disclosed.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Various embodiments include an apparatus to supply precursor gases to a processing tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a processing chamber of the processing tool. The manifold body has a multiple precursor-gas outlet ports surrounded by an annulus. A purge-gas outlet port of the manifold body is directed substantially toward interior walls of the annulus. For each of multiple precursor gases, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a precursor-gas supply and has a separate precursor-gas flow path internal to the manifold body. The divert valve diverts the precursor gas during a period when the precursor gas is not to be directed into the processing chamber by the first valve. Other examples are disclosed.

Abstract: Various embodiments include an apparatus to supply precursor gases to a processing tool. In various examples, the apparatus includes a point-of-use (POU) valve manifold that includes a manifold body to couple to a processing chamber of the processing tool. The manifold body has a multiple precursor-gas outlet ports surrounded by an annulus. A purge-gas outlet port of the manifold body is directed substantially toward interior walls of the annulus. For each of multiple precursor gases, the POU-valve manifold further includes: a first valve coupled to the manifold body and a divert valve coupled to the first valve. The first valve can be coupled to a precursor-gas supply and has a separate precursor-gas flow path internal to the manifold body. The divert valve diverts the precursor gas during a period when the precursor gas is not to be directed into the processing chamber by the first valve. Other examples are disclosed.

Abstract: A showerhead for a substrate processing chamber includes: inner walls; an inner plenum between the inner walls; and a faceplate having a first surface and a second surface that is opposite the first surface. Holes through the faceplate extend from the first surface to the second surface. A first inlet is fluidly connected to the inner plenum. A first outer plenum is between the inner walls and outer walls. A second outer plenum is between the inner walls and the outer walls. Coolant: fluidly connect the first outer plenum with the second outer plenum; are located within the faceplate between the first and second surfaces; and are fluidly isolated from the holes. The showerhead also includes a second inlet that is fluidly connected to the first outer plenum.

Abstract: A showerhead for a substrate processing chamber includes: inner walls; an inner plenum between the inner walls; a faceplate having a first surface and a second surface that is opposite the first surface; holes through the faceplate that extend from the first surface to the second surface; a first inlet that is fluidly connected to the inner plenum; outer walls; a first outer plenum between the inner walls and the outer walls; a second outer plenum between the inner walls and the outer walls; and coolant channels that: fluidly connect the first outer plenum with the second outer plenum; are located within the faceplate between the first and second surfaces; and are fluidly isolated from the holes. The showerhead also includes a second inlet that is fluidly connected to the first outer plenum.