Abstract: A membrane is electrically charged to a polarity. A surface of carbon nanotubes (CNTs) in a solution is caused to acquire a charge of the polarity. The solution is filtered through the membrane. An electromagnetic repulsion between the membrane of the polarity and the CNTs of the polarity causes the CNTs to spontaneously align to form a crystalline structure.

Abstract: A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

Abstract: Methods of forming a battery include forming a thin graphene cathode on a substrate. A lithium anode is formed and an electrolyte is formed between the thin graphene cathode and the lithium anode.

Abstract: Batteries include an anode, an electrolyte having a high solubility for lithium ions and oxygen, and a cathode formed on a substrate. Lithium ions migrate from the anode through the electrolyte to form Li2O2 at a surface of the cathode. A current collector positioned in the electrolyte, the electrolyte separating the anode from the cathode.

Abstract: A spatial light modulator (SLM) is provided that includes an optical resonator (i.e., pixel) having nanoscale size. The optical resonator having nanoscale size includes a phase-change material such as, for example, a GeSbTe alloy, sandwiched between silicon nitride cladding layers. The phase-change material can undergo a crystalline-to-amorphous phase transition which is characterized by a large change in optical properties of the resonator.

Abstract: Differential, plasmonic, non-dispersive infrared gas sensors are provided. In one aspect, a gas sensor includes: a plasmonic resonance detector including a differential plasmon resonator array that is resonant at different wavelengths of light; and a light source incident on the plasmonic resonance detector. The differential plasmon resonator array can include: at least one first set of plasmonic resonators interwoven with at least one second set of plasmonic resonators, wherein the at least one first set of plasmonic resonators is configured to be resonant with light at a first wavelength, and wherein the at least one second set of plasmonic resonators is configured to be resonant with light at a second wavelength. A method for analyzing a target gas and a method for forming a plasmonic resonance detector are also provided.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.

Abstract: A computer-implemented method of forming a thermal-based electronic image of an object that includes receiving electromagnetic radiation emitted by the object at an optically sensitive layer including a superpixel having a plurality of pixels. Each pixel of the plurality of pixels includes a plasmonic absorber having a characteristic resonance wavelength and that generates a radiance measurement of the electromagnetic radiation at its characteristic resonance wavelength. The method further provides for determining, at a processor, an emissivity and temperature for the electromagnetic radiation received at the superpixel using the radiance measurements obtained at the pixels of the superpixel. In addition, the method provides for forming an image of the object from the determined emissivity and temperature.

Abstract: A computer-implemented method and thermal imaging device includes a layer of plasmonic material and a processor. The layer of plasmonic material receive electromagnetic radiation from an object and generates radiance measurements of the electromagnetic radiation at a plurality of wavelengths. The processor determines an emissivity and temperature of the object from the radiance measurements and forms a thermal-based electronic image of the object from the determined emissivity and temperature.

Abstract: A computer-eimplemented thermal imaging device having an optically-sensitive layer that includes a superpixel having at least one pixel. The at least one pixel includes a plasmonic absorber configured to obtain radiance measurements of electromagnetic radiation emitted from an object at a plurality of wavelengths. The device further includes a processor configured to determine an emissivity and temperature for the electromagnetic radiation received at the plasmonic material from the object using the radiance measurements and to form an image of the object from the determined emissivity and temperature.

Abstract: A spatial light modulator (SLM) is provided that includes an optical resonator (i.e., pixel) having nanoscale size. The optical resonator having nanoscale size includes a phase-change material such as, for example, a GeSbTe alloy, sandwiched between silicon nitride cladding layers. The phase-change material can undergo a crystalline-to-amorphous phase transition which is characterized by a large change in optical properties of the resonator.

Abstract: A method of forming a chemical sensor includes forming a dielectric layer on an electrode. A carbon nanotube film is deposited on the dielectric layer. The carbon nanotube film is patterned into strips.

Abstract: Photodetectors and methods of forming the same include a first electrode. A carbon nanotube film is formed on the first electrode. A first graphene sheet is formed on the carbon nanotube film. A second graphene sheet is configured to exert an electrical field on the first graphene sheet that changes an electrical property of the first graphene sheet.

Abstract: A semiconductor device includes a ribbon of a thickness and a width. A material of the ribbon is configured to host excitons as well as plasmons, and the width is an inverse function of a wavector value at which an energy level of plasmons in the material substantially equals an energy level of excitons in the material. The substantially equal energies of the plasmons and the excitons in the ribbon cause an excitation of intrinsic plasmon-exciton polaritons (IPEPs) in the ribbon. A first contact electrically couples to a first location on the ribbon, and a second contact electrically couples to a second location on the ribbon.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer on a substrate, forming a carbon nanotube (CNT) layer on the first dielectric layer, forming a second dielectric layer on the carbon nanotube (CNT) layer, patterning a plurality of trenches in the second dielectric layer exposing corresponding portions of the carbon nanotube (CNT) layer, forming a plurality of contacts respectively in the plurality of trenches on the exposed portions of the carbon nanotube (CNT) layer, performing a thermal annealing process to create end-bonds between the plurality of the contacts and the carbon nanotube (CNT) layer, and depositing a passivation layer on the plurality of the contacts and the second dielectric layer.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.

Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.

Abstract: A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.

Abstract: A method for manufacturing a semiconductor device includes forming a dielectric layer on a substrate, forming a first carbon nanotube (CNT) layer on the dielectric layer at a first portion of the device corresponding to a first doping type, forming a second CNT layer on the dielectric layer at a second portion of the device corresponding to a second doping type, forming a plurality of first contacts on the first CNT layer, and a plurality of second contacts on the second CNT layer, performing a thermal annealing process to create end-bonds between the plurality of the first and second contacts and the first and second CNT layers, respectively, depositing a passivation layer on the plurality of the first and second contacts, and selectively removing a portion of the passivation layer from the plurality of first contacts.