Patents by Inventor Damon E. VanGerpen

Damon E. VanGerpen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7268057
    Abstract: The invention includes methods in which oxide is formed within openings in a three-step process. A first step is deposition of oxide under a pressure of greater than 15 mTorr. A second step is removal of a portion of the oxide with an etch. A third step is an oxide deposition under a pressure of less than or equal to 10 mTorr. Methodology of the present invention can be utilized for forming trenched isolation regions, such as, for example, shallow trench isolation regions.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: September 11, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Joseph M. Ryan, Damon E. VanGerpen