Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.

Abstract: An inspection system includes an illumination source configured to generate extreme ultraviolet (EUV) light, illumination optics to direct the EUV light to a sample within a range of off-axis incidence angles corresponding to an illumination pupil distribution, collection optics to collect light from the sample in response to the incident EUV light within a range of collection angles corresponding to an imaging pupil distribution, and a detector configured to receive at least a portion of the light collected by the collection optics. Further, a center of the illumination pupil distribution corresponds to an off-axis incidence angle along a first direction on the sample, and at least one of the illumination pupil distribution or the imaging pupil distribution is non-circular with a size along the first direction shorter than along a second direction perpendicular to the first direction.

Abstract: Disclosed are methods and apparatus for measuring and controlling polarization for inspection of a semiconductor sample.

Abstract: Disclosed are methods and apparatus for measuring and controlling polarization for inspection of a semiconductor sample.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Abstract: Disclosed are methods and apparatus for generating a sub-208 nm laser. A laser apparatus includes one or more seed radiation sources for generating a first radiation beam having a first fundamental wavelength on a first optical path and a second radiation beam having a second fundamental wavelength on a second optical path, a first amplifier for amplifying the first radiation beam, a second amplifier for amplifying the second radiation beam, and a wavelength conversion module comprising a plurality of crystals for frequency multiplying and mixing the amplified first and second radiation beams to produce an output beam at a fifth harmonic that is less than about 208 nm.

Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Abstract: Disclosed are methods and apparatus for reflecting, towards a sensor, extreme ultra-violet (EUV) light that is reflected from a target substrate. The system includes a first mirror arranged to receive and reflect the EUV light that is reflected from the target substrate, a second mirror arranged to receive and reflect the EUV light that is reflected by the first mirror, a third mirror arranged to receive and reflect the EUV light that is reflected by the second mirror, and a fourth mirror arranged to receive and reflect the EUV light that is reflected by the third mirror. The first mirror has an aspherical surface. The second, third, and fourth mirrors each have a spherical surface.

Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

Abstract: Disclosed are methods and apparatus for generating a sub-208 nm laser. A laser apparatus includes one or more seed radiation sources for generating a first radiation beam having a first fundamental wavelength on a first optical path and a second radiation beam having a second fundamental wavelength on a second optical path, a first amplifier for amplifying the first radiation beam, a second amplifier for amplifying the second radiation beam, and a wavelength conversion module comprising a plurality of crystals for frequency multiplying and mixing the amplified first and second radiation beams to produce an output beam at a fifth harmonic that is less than about 208 nm.

Abstract: The disclosure is directed to a system and method of providing illumination for reticle inspection. According to various embodiments of the disclosure, a multiplexing mirror system receives pulses of illumination from a plurality of illumination sources and directs the pulses of illumination along an illumination path to a plurality of field mirror facets. The field mirror facets receive at least a portion of illumination from the illumination path and direct at least a portion of the illumination to a plurality of pupil mirror facets. The pupil mirror facets receive at least a portion of illumination reflected from the field mirror facets and direct the portion of illumination along a delivery path to a reticle for imaging and/or defect inspection.

Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.

Abstract: Methods and systems for source multiplexing illumination for mask inspection are disclosed. Such illumination systems enable EUV sources of small brightness to be used for EUV mask defect inspection at nodes below the 22 nm. Utilizing the multiple plane or conic mirrors that are either attached to a continuously rotating base with different angles or individually rotating to position for each pulse, the reflected beams may be directed through a common optical path. The light may then be focused by a condenser to an EUV mask. The reflected and scattered light from the mask may then be imaged by some imaging optics onto some sensors. The mask image may be subsequently processed for defect information.

Abstract: Disclosed is an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Abstract: Disclosed is an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Abstract: Disclosed is an apparatus for illuminating a sample. In one embodiment, this apparatus includes a laser for outputting an incident laser beam towards a sample and a first diffractive element having a plurality of diffraction pattern portions. The first diffractive element is movable so that each of its diffraction pattern portions can be selectively positioned in the incident beam's path and the diffraction pattern portions of the first diffractive element are designed to cause the incident beam to have different spatial illumination profiles at a pupil plane of the incident beam while reducing effects caused by the incident beam's coherence. The apparatus further includes an illumination profile element configured to spatially distribute light at an illumination plane of the incident beam and a plurality of illumination optical elements for directing the incident beam towards the sample.

Abstract: Disclosed is an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Abstract: Disclosed in an optical inspection system for inspecting the surface of a substrate. The optical inspection system includes a light source for emitting an incident light beam along an optical axis and a first set of optical elements arranged for separating the incident light beam into a plurality of light beams, directing the plurality of light beams to intersect with the surface of the substrate, and focusing the plurality of light beams to a plurality of scanning spots on the surface of the substrate. The inspection system further includes a light detector arrangement including individual light detectors that correspond to individual ones of a plurality of reflected or transmitted light beams caused by the intersection of the plurality of light beams with the surface of the substrate. The light detectors are arranged for sensing the light intensity of either the reflected or transmitted light.

Abstract: Provided are apparatus and methods for detecting phase defects. The invention relies generally on the distortion of light as it passes through defects in phase shift masks to detect these defects. Light traveling through a defect, such as a bump in an etched area will travel at a different angle than light traveling through air. In order to enhance the signals generated from the defects, the invention in several embodiments provides a multiple element detector having at least four elements, arranged in a radially symmetric configuration. Individual elements of the detector are selected to form a differential signal based on the configuration of pattern lines in the area proximate to the defect. The resulting differential signal is used to generate an image signal and to identify phase defects.

Abstract: Provided are apparatus and methods for detecting phase defects. The invention relies generally on the distortion of light as it passes through defects in phase shift masks to detect these defects. Light traveling through a defect, such as a bump in an etched area will travel at a different angle than light traveling through air. In order to enhance the signals generated from the defects, the invention in several embodiments provides a multiple element detector having at least four elements, arranged in a radially symmetric configuration. Individual elements of the detector are selected to form a differential signal based on the configuration of pattern lines in the area proximate to the defect. The resulting differential signal is used to generate an image signal and to identify phase defects.