Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include an amplification path with a transistor die, and an output-side impedance matching circuit having a T-match circuit topology. The output-side impedance matching circuit includes a first inductive element connected between the transistor output terminal and a quasi RF cold point node, a second inductive element connected between the quasi RF cold point node and an output of the amplification path, and a first capacitance connected between the quasi RF cold point node and a ground reference node. The RF amplifiers and devices also include a baseband termination circuit connected to the quasi RF cold point node, which includes a third inductive element, a resistor, and a second capacitance in series between the quasi RF cold point node and the ground reference node and a third capacitance between a baseband termination circuit node and the ground reference node.