Patents by Inventor Dan An

Dan An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250034134
    Abstract: Provided are a 15-PGDH inhibitor and the use thereof. The 15-PGDH inhibitor is a heterocyclic compound as represented by formula I, a solvate thereof, a pharmaceutically acceptable salt thereof, a solvate of a pharmaceutically acceptable salt thereof, or a prodrug thereof. The compound has a good inhibitory effect on 15-PGDH.
    Type: Application
    Filed: November 18, 2022
    Publication date: January 30, 2025
    Applicant: Wuhan Humanwell Innovative Drug Research and Development Center Limited Company
    Inventors: Xuejun ZHANG, Xueqiang LI, Hongqiang WANG, Dabing YE, Meng WANG, Dan AN, Zhenxing GAO, Xin ZHAO, Li'e LI, Jun YANG
  • Patent number: 6734528
    Abstract: The present invention discloses an improved transistor with a &pgr;-gate structure usable at microwave and millimeter wave and comprises a GaAs wafer, GND formed on the bottom surface of the wafer and grounded to source layers formed on the top surface of the wafer by the process of back-side via-hole. A drain is formed on the top surface of the wafer between the source layers and has an air layer on top. A gate, shaped as a result of using an air bridge technique, contacts the top surface of the wafer between the source layers and the drain so as to support the wafer at laterally opposite ends over the air layer of the drain. The gate having &pgr;-structure improves noise characteristics of the transistor because of low electrical resistance, which is a result of the gate structure straddling above the drain stage.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: May 11, 2004
    Inventors: Jin-Koo Rhee, Hyun-Sik Park, Dan An, Yeon-Sik Chae
  • Publication number: 20020063293
    Abstract: The present invention proposes a improved transistor with &pgr;-gate structure usable at microwave and millimeter wave and a method for producing the same.
    Type: Application
    Filed: January 4, 2001
    Publication date: May 30, 2002
    Inventors: Jin-Koo Rhee, Hyun-Sik Park, Dan An, Yeon-Sik Chae