Abstract: Display panels are provided according to embodiments of the present disclosure. The display panel includes: a substrate, anodes disposed on the substrate, an inorganic barrier layer, and a pixel definition layer. The inorganic barrier layer includes barrier parts, and the anodes are arranged at intervals between the barrier parts. The pixel definition layer includes pixel definition parts each covering the barrier part and a part of the anode. An orthographic projection of a side of the barrier part adjacent to the substrate on the substrate is located within an orthographic projection of a side of the barrier part away from the substrate on the substrate.

Abstract: A display panel and a display device are provided. The display panel includes a substrate, a ladder structure, and an electrode layer disposed in a stack. The ladder structure is located in an encapsulation region. The ladder structure includes a first film layer and a second film layer disposed in a stack. An undercut opening is defined on a lateral side of the first film layer. The second film layer includes a first sub-layer and a second sub-layer disposed in a stack. A thickness of the second sub-layer is greater than a thickness of the first sub-layer. The first sub-layer is a metal film layer. The second sub-layer is an organic film layer.

Abstract: Display panels are provided according to embodiments of the present disclosure. The display panel includes a substrate, anodes disposed on the substrate, and a pixel definition layer. The anodes include at least one first sub-anode and at least one second sub-anode adjacent to first sub-anode. A difference between a first distance between a side of the first sub-anode away from the substrate and the substrate and a second distance between a side of the second sub-anode away from the substrate and the substrate is greater than or equal to a thickness of the second sub-anode.

Abstract: A display panel and a display device are provided. A first organic layer of the display panel forms a first barrier portion in a transition area. A first metal layer forms a second barrier portion in the transition area. The second barrier portion covers an upper surface and a first side surface of the first barrier portion, and extends away from the first side surface and beyond a boundary of the upper surface of the first barrier portion, so as to form an undercut structure. Therefore, the problem that in conventional OLED products, water and oxygen gas are easily transmitted from outside of the display panel to inside using the emission layer is alleviated.

Abstract: The present invention discloses an array substrate, a manufacturing method thereof, and a display device thereof. The array substrate includes a substrate; a plurality of first thin film transistors, the first thin film transistors including a first gate electrode layer and a second gate electrode layer; a plurality of second thin film transistors, the second thin film transistors including a third gate electrode layer; and a gate electrode insulation layer disposed between the first gate electrode layer and the second gate electrode layer, and the third gate electrode layer located near a surface of a side of the substrate. The gate electrode insulation layer is silicon nitride material.

Abstract: A display panel and a display device are provided. A first organic layer of the display panel forms a first barrier portion in a transition area. A first metal layer forms a second barrier portion in the transition area. The second barrier portion covers an upper surface and a first side surface of the first barrier portion, and extends away from the first side surface and beyond a boundary of the upper surface of the first barrier portion, so as to form an undercut structure. Therefore, the problem that in conventional OLED products, water and oxygen gas are easily transmitted from outside of the display panel to inside using the emission layer is alleviated.

Abstract: The present invention discloses an array substrate, a manufacturing method thereof, and a display device thereof. The array substrate includes a substrate; a plurality of first thin film transistors, the first thin film transistors including a first gate electrode layer and a second gate electrode layer; a plurality of second thin film transistors, the second thin film transistors including a third gate electrode layer; and a gate electrode insulation layer disposed between the first gate electrode layer and the second gate electrode layer, and the third gate electrode layer located near a surface of a side of the substrate. The gate electrode insulation layer is silicon nitride material.

Abstract: The present application provides a display panel and a manufacturing of the display panel, the display panel includes a substrate, a thin film transistor layer, and a light emitting layer successively laminated and formed. The light emitting layer includes an anode layer, a light emitting portion, and a cathode layer successively laminated and formed. The anode layer includes a laminated structure, the laminated structure includes at least one first sub layer and at least one second sub layer alternant formed on the thin film transistor layer, the laminated structure is used to form a Bragg reflection, thereby improving display quality of the display panel.

Abstract: The present application provides a display panel and a manufacturing of the display panel, the display panel includes a substrate, a thin film transistor layer, and a light emitting layer successively laminated and formed. The light emitting layer includes an anode layer, a light emitting portion, and a cathode layer successively laminated and formed. The anode layer includes a laminated structure, the laminated structure includes at least one first sub layer and at least one second sub layer alternant formed on the thin film transistor layer, the laminated structure is used to form a Bragg reflection, thereby improving display quality of the display panel.

Abstract: The present invention provides an OLED back plate and a manufacture method thereof. In the manufacture method of the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, and the planarization layer can serve as the mask of the etching process of the interlayer dielectric layer, and also can make the surface of the second source made on the surface thereof be flattened, which is advantageous to increase the area of the OLED light emitting area and to increase the aperture ratio. In the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, the surface of the second source made on the surface of the planarization layer is flattened, of which the OLED light emitting area is larger and the aperture ratio is higher.

Abstract: An organic light emitting display device is provided, including a substrate, an organic light emitting structure, and a display screen. The organic light emitting structure is disposed between the substrate and the display screen, for emitting light to the display screen. The display screen includes an organic photoresist layer, which is doped with nanoparticles, which have a function of refracting light emitted by the organic light emitting structure toward an outside.

Abstract: An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.

Abstract: A flexible display apparatus is provided in the present disclosure and includes a flexible substrate, an organic electroluminescent device, and a plurality of thin film transistors disposed between the flexible substrate and the organic electroluminescent device. The organic electroluminescent device is controlled by the thin film transistors to emit light. The flexible substrate is doped with a plurality of nano-particles that are configured to refract the light emitted from the organic light-emitting layer to an external environment.

Abstract: The present invention provides an OLED back plate and a manufacture method thereof. In the manufacture method of the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, and the planarization layer can serve as the mask of the etching process of the interlayer dielectric layer, and also can make the surface of the second source made on the surface thereof be flattened, which is advantageous to increase the area of the OLED light emitting area and to increase the aperture ratio. In the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, the surface of the second source made on the surface of the planarization layer is flattened, of which the OLED light emitting area is larger and the aperture ratio is higher.

Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an epitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.

Abstract: The present invention provides an OLED back plate and a manufacture method thereof. In the manufacture method of the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, and the planarization layer can serve as the mask of the etching process of the interlayer dielectric layer, and also can make the surface of the second source made on the surface thereof be flattened, which is advantageous to increase the area of the OLED light emitting area and to increase the aperture ratio. In the OLED back plate of the present invention, by forming the planarization layer on the interlayer dielectric layer, the surface of the second source made on the surface of the planarization layer is flattened, of which the OLED light emitting area is larger and the aperture ratio is higher.

Abstract: A flexible display apparatus is provided in the present disclosure and includes a flexible substrate, an organic electroluminescent device, and a plurality of thin film transistors disposed between the flexible substrate and the organic electroluminescent device. The organic electroluminescent device is controlled by the thin film transistors to emit light. The flexible substrate is doped with a plurality of nano-particles that are configured to refract the light emitted from the organic light-emitting layer to an external environment.

Abstract: An integrated device and a fabrication method thereof are provided. In the device, by using various anisotropic silicon etching techniques, the silicon substrate layer and the expitaxial buffer layer under the device structure are removed, an ultra-thin device monolithically integrated with a suspended LED, an optical waveguide and a photodetector is obtained by further using the nitride back thinning etching technique. In the device, the light source, the optical waveguide and the photodetector are integrated on the same chip. The light emitted by the LED is laterally coupled to the optical waveguide, transmitted over the optical waveguide, and detected by the photodetector at the other end of the optical waveguide, thereby achieving a planar photon monolithically integrated device which is applied in the fields of optical transmission and optical sensing.

Abstract: By using various anisotropic silicon etching techniques, a silicon substrate layer (1) and an expitaxial buffer layer (2) under the device structure are removed to obtain a monolithic photonic integration of silicon substrate suspended light-emitting diode (LED) with optical waveguide, and an ultra-thin device monolithically integrated with a suspended LED and an optical waveguide is obtained by further using the nitride back thinning etching technique. Therefore, internal loss of the LED is reduced and light emitting efficiency is improved. In the device according to the present disclosure, the light source and the optical waveguide are integrated on the same wafer, which solves the problem of monolithic integration of planar photons, enables the light emitted by the LED to be transmitted along the optical waveguide, addresses the problem of transmission of light in the optical waveguide, and implements the function of transmitting light within a plane.