Patents by Inventor Dan Carl
Dan Carl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100206246Abstract: A retractable animal leash combined with a pepper spray dispenser includes: a housing having a first side and a second side; a handle at the first side of the housing; a dispenser region in the handle, adapted to retain the spray canister; and an attachment for the leash at the second side of the housing. A tube provides a path for spray from the spray canister to pass through the housing and out the second side of the housing. A trigger activates the spray canister and has a safety cover. A reel with a brake allows the leash to extend and urges the leash to retract.Type: ApplicationFiled: February 16, 2010Publication date: August 19, 2010Inventor: Dan Carl Waldrep
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Patent number: 7497932Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: GrantFiled: June 27, 2006Date of Patent: March 3, 2009Assignee: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Anna Marie Lloyd, legal representative, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier, Mark Lloyd
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Publication number: 20060246690Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: ApplicationFiled: June 27, 2006Publication date: November 2, 2006Inventors: Yezdi Dordi, Donald Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Anna Lloyd, Joseph Stevens, Dan Marohl, Ho Shin, Eugene Ravinovich, Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Publication number: 20040084301Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: ApplicationFiled: October 20, 2003Publication date: May 6, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Anna Marie Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Publication number: 20040079633Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.Type: ApplicationFiled: October 15, 2003Publication date: April 29, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl
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Patent number: 6635157Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: GrantFiled: May 29, 2001Date of Patent: October 21, 2003Assignee: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Publication number: 20020029961Abstract: The present invention provides an electrochemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electrochemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electrochemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electrochemical deposition process and the components of the electrochemical deposition system.Type: ApplicationFiled: May 29, 2001Publication date: March 14, 2002Applicant: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Anna Marie Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Patent number: 6258220Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.Type: GrantFiled: April 8, 1999Date of Patent: July 10, 2001Assignee: Applied Materials, Inc.Inventors: Yezdi Dordi, Donald J. Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K. Sinha, Avi Tepman, Dan Carl, George Birkmaier
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Patent number: 6200433Abstract: The present invention generally provides a copper metallization method for depositing a conformal barrier layer and seed layer in a plasma chamber. The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil and a target comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.Type: GrantFiled: November 1, 1999Date of Patent: March 13, 2001Assignee: Applied Materials, Inc.Inventors: Peijun Ding, Rong Tao, Barry Chin, Dan Carl
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Patent number: 6136163Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results.Type: GrantFiled: March 5, 1999Date of Patent: October 24, 2000Assignee: Applied Materials, Inc.Inventors: Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl
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Patent number: 5468687Abstract: A method for low temperature annealing (oxidation) of high dielectric constant Ta.sub.2 O.sub.5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta.sub.2 O.sub.5 reduces the processing temperature to 400.degree. C. and achieves comparable film quality, making the Ta.sub.2 O.sub.5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.Type: GrantFiled: July 27, 1994Date of Patent: November 21, 1995Assignee: International Business Machines CorporationInventors: Dan Carl, David M. Dobuzinsky, Son V. Nguyen, Tue Nguyen