Patents by Inventor Dan Damjanovic
Dan Damjanovic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240088319Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: November 13, 2023Publication date: March 14, 2024Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20240030367Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.Type: ApplicationFiled: September 25, 2023Publication date: January 25, 2024Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Patent number: 11817516Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: October 25, 2019Date of Patent: November 14, 2023Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Patent number: 11769844Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.Type: GrantFiled: October 19, 2021Date of Patent: September 26, 2023Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Publication number: 20220045226Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.Type: ApplicationFiled: October 19, 2021Publication date: February 10, 2022Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Publication number: 20200058818Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: October 25, 2019Publication date: February 20, 2020Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Patent number: 10529883Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: November 3, 2014Date of Patent: January 7, 2020Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Patent number: 10461207Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: GrantFiled: January 22, 2015Date of Patent: October 29, 2019Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20190221685Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.Type: ApplicationFiled: March 25, 2019Publication date: July 18, 2019Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Patent number: 10243092Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.Type: GrantFiled: June 2, 2017Date of Patent: March 26, 2019Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Publication number: 20170271533Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.Type: ApplicationFiled: June 2, 2017Publication date: September 21, 2017Applicant: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Patent number: 9698285Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.Type: GrantFiled: February 3, 2014Date of Patent: July 4, 2017Assignee: First Solar, Inc.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
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Publication number: 20160126395Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: November 3, 2014Publication date: May 5, 2016Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20160126396Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.Type: ApplicationFiled: January 22, 2015Publication date: May 5, 2016Inventors: Dan Damjanovic, Markus Gloeckler, Feng Liao, Andrei Los, Dan Mao, Benjamin Milliron, Gopal Mor, Rick Powell, Kenneth Ring, Aaron Roggelin, Jigish Trivedi, Zhibo Zhao
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Publication number: 20140261689Abstract: A photovoltaic device is disclosed, the device having a zinc-containing layer, such as a ZnO1-xSx layer, as a window layer, as part of a composite window layer, and/or as a buffer layer. Use of the ZnO1-xSx layer improves an overall efficiency of the photovoltaic device due to improved optical transmission thereof as compared to CdS window layers, and due to a improved quantum efficiency of the photovoltaic device in the blue light spectrum due to the presence of the ZnO1-xSx layer.Type: ApplicationFiled: March 14, 2014Publication date: September 18, 2014Inventors: Benyamin Buller, Dan Damjanovic, Jing Guo, David Hwang, Zhibo Zhao
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Publication number: 20140261687Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.Type: ApplicationFiled: March 13, 2014Publication date: September 18, 2014Applicant: FIRST SOLAR, INCInventors: Dan Damjanovic, Rick C. Powell, Jigish Trivedi, Zhibo Zhao
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Publication number: 20140216550Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p-type absorber layer above the CdSSe layer.Type: ApplicationFiled: February 3, 2014Publication date: August 7, 2014Applicant: FIRST SOLAR, INC.Inventors: Dan Damjanovic, Feng Liao, Rick Powell, Rui Shao, Jigish Trivedi, Zhibo Zhao
