Abstract: Methods and apparatus for detecting cross-linking in a polymer, wherein, in some exemplary implementations, the polymer may constitute an encapsulation layer for a photovoltaic module. In one example, a polymer sample is physically deformed, and sample information relating to a relaxation or a recovery of the polymer sample in response to the deformation is obtained. The sample information is then compared to reference information relating to cross-linking of the polymeric material so as to determine a degree of cross-linking in the tested polymer sample. In one aspect, such a determination of polymer cross-linking is achieved without adversely affecting a relevant functionality of the polymer/encapsulation layer (e.g., without destruction to the polymer/encapsulation layer).

Abstract: Methods and apparatus for detecting cross-linking in a polymer, wherein, in some exemplary implementations, the polymer may constitute an encapsulation layer for a photovoltaic module. In one example, a polymer sample is physically deformed, and sample information relating to a relaxation or a recovery of the polymer sample in response to the deformation is obtained. The sample information is then compared to reference information relating to cross-linking of the polymeric material so as to determine a degree of cross-linking in the tested polymer sample. In one aspect, such a determination of polymer cross-linking is achieved without adversely affecting a relevant functionality of the polymer/encapsulation layer (e.g., without destruction to the polymer/encapsulation layer).

Abstract: The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.