Patents by Inventor Dan Hahn

Dan Hahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8736013
    Abstract: In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode.
    Type: Grant
    Filed: April 19, 2012
    Date of Patent: May 27, 2014
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Chris Nassar, Dan Hahn, Sunglyong Kim, Jongjib Kim
  • Publication number: 20130277791
    Abstract: In one general aspect, an apparatus includes a metal or metal silicide contact layer disposed on an n-well region of a semiconductor substrate to form a primary Schottky diode. The apparatus includes a p-well guard ring region of the semiconductor substrate abutting the primary Schottky diode. The metal silicide contact layer has a perimeter portion extending over the p-well guard ring region of the semiconductor substrate and the p-well guard ring region has a doping level establishing a work function difference relative to the perimeter portion of the metal silicide contact layer to form a guard ring Schottky diode. The guard ring Schottky diode is in series with a p-n junction interface of the p-well region and the n-well region and the guard ring Schottky diode has a polarity opposite to that of the primary Schottky diode.
    Type: Application
    Filed: April 19, 2012
    Publication date: October 24, 2013
    Inventors: Chris Nassar, Dan Hahn, Sunglyong Kim, Jongjib Kim