Abstract: A substrate processing chamber has a substrate support to support a substrate, and an exhaust conduit about the substrate support. A first process gas distributor directs a first process gas, such as a non-reactive gas, about the substrate perimeter and toward the exhaust conduit at a first flow rate to form a curtain of non-reactive gas about the substrate. A second process gas distributor directs a second process gas, such as reactive CVD or etchant gas, toward a central portion of the substrate at a second flow rate which is lower than the first flow rate. A gas energizer energizes the first and second process gases in the chamber. A controller operates the substrate support, gas flow meters, gas energizer, and throttle valve, to process the substrate in the energized gas.

Abstract: The present invention provides a plasma reactor having a plasma source chamber capable of generating a high density plasma typically utilizing a helicon wave. The plasma is delivered to a process chamber having a workpiece. The present invention may provide a plurality of magnets, each being located longitudinally around an axis perpendicular to the plane of the workpiece to form a magnetic bucket that extends the length of the side wall of the processing chamber and across a workpiece insertion opening and a vacuum pump opening. The magnetic bucket of the present invention may be formed so that the pedestal need not be raised to be within the bucket, or may be formed by permanent magnets oriented with one pole of each magnet facing the interior of the processing chamber, or with opposite poles of adjacent magnets facing each other, thereby forming cusps around the axis perpendicular to the plane of the workpiece. Current carrying conductors may generate all or part of the magnetic bucket.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency.

Abstract: A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source.

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.