Abstract: Transistor structures comprising a gate electrode, or “gate,” that is self-aligned to underlying channel material. A mask material employed for patterning the channel material is further employed to define a cap of mask material having a larger width that protects a portion of gate material during a gate etch. The cap is therefore self-aligned to the channel material so that an amount by which a gate material extends laterally beyond the channel material is ensured to be symmetrical about a centerline of the channel material.

Abstract: Integrated circuit (IC) static random-access memory (SRAM) comprising pass-gate transistors and pull-down transistors having different threshold voltages (Vt). A pass-gate transistor with a higher Vt than the pull-down transistor, may reduce read instability of a bit-cell, and/or reduce overhead associated with read assist circuitry coupled to the bit-cell. In some examples, a different amount of a dipole dopant source material is deposited as part of the gate insulator for the pull-down transistor than for the pass-gate transistor, reducing the Vt of the pull-down transistor accordingly. In some examples, an N-dipole dopant source material is removed from the pass-gate transistor prior to a drive/activation anneal is performed. After drive/activation, the N-dipole dopant source material may be removed from the pull-down transistor and a same gate metal deposited over both the pass-gate and pull-down transistors.