Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: A selected reject band non-RF-coupling tile includes a ground plate disposed on a first side of a printed circuit board. The selected reject band non-RF-coupling tile also includes a planar inductor disposed on a second side of the printed circuit board. The selected reject band non-RF-coupling tile also includes a conductive via structure extending through the printed circuit board. The conductive via structure electrically connects to both the ground plate and the planar inductor at a location near an interior end of the planar inductor. The selected reject band non-RF-coupling tile is used to shield enclosure walls and/or other electrical circuitry from RF fields. The selected reject band non-RF-coupling tile is also used to encapsulate an RF carrying component to block RF fields that emanate from the RF carrying component.

Abstract: A window support system for a plasma processing chamber includes a window support frame configured to circumscribe an opening. The window support frame has a top surface, a bottom surface, an inner surface, and an outer surface. Each of the inner surface and outer surface extends between the top surface and the bottom surface. A channel is formed within the outer surface. The top surface is configured to mechanically and thermally interface with an outer peripheral portion of a window that is substantially transparent to radiofrequency power. The window support system also includes a heating element disposed within the channel of the window support frame. The heating element is configured to substantially circumscribe the window support frame.

Abstract: A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

Abstract: A balun transformer for use in powering an electrode coil of a semiconductor chamber is provided. In one example, the balun transformer includes a primary coil having a primary winding between a primary first end and a primary second end. The primary winding defined from a primary rectangular conductor. The balun transformer includes a secondary coil having a secondary winding between a secondary first end and a secondary second end. The secondary winding defined from a secondary rectangular conductor. The primary rectangular conductor and the secondary rectangular conductor are interleaved in a spaced apart orientation, such that one or two sides of each of the primary rectangular conductor and the secondary rectangular conductor are adjacent to one another.

Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A substrate support for a substrate processing chamber configured to implement a rapid alternating process includes a baseplate and a heating plate arranged on the baseplate. The heating plate includes a first zone including a first heating element configured to adjust a first temperature of the first zone of the heating plate and a second zone including a second heating element configured to adjust a second temperature of the second zone of the heating plate. A first thermally conductive bond layer is arranged between the heating plate and the baseplate. The first thermally conductive bond layer is configured to transfer heat from the heating plate to the baseplate during the rapid alternating process. The rapid alternating process includes a plurality of alternating deposition steps and etching steps.

Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A substrate processing system includes a processing chamber including a dielectric window and a substrate support arranged therein to support a substrate. A coil is arranged outside of the processing chamber adjacent to the dielectric window. A Faraday shield is arranged between the coil and the dielectric window. An RF generator is configured to supply RF power to the coil. The coil is coupled by stray capacitance and/or directly coupled to the Faraday shield. A capacitor is connected to one of the coil and the Faraday shield to adjust a position of a voltage standing wave along the coil.

Abstract: A dielectric window for a process chamber is provided. The dielectric window includes a disc-shaped body consisting of a first dielectric material having a first dielectric constant. An annular portion consisting of a second dielectric material having a second dielectric constant greater than the first dielectric constant is seated in the disc-shaped body. The dielectric window has a substantially constant thickness over a process region of the process chamber. The process region is an interior region of the process chamber in which a plasma is generated during processing of a substrate in the process chamber. The seating of the annular portion in the disc-shaped body is configured to maintain the substantially constant thickness of the dielectric window.

Abstract: A robot system for servicing a semiconductor tool includes a cart frame. An arm support frame is fixed to the cart frame and is coupled to a robot arm. An arm frame is connected by hinges to the arm support frame at a first end and to a fixture connect interface at a second end. The fixture connect interface connects to a docking fixture of the semiconductor tool. An arm locking mechanism is attached to the arm support frame for locking the arm frame, when rotated, to an extended position or a folded position. The fixture connect interface connects the cart frame to the semiconductor tool, when the arm frame is locked in the extended position.

Abstract: A gas distribution assembly for a processing chamber in a substrate processing system includes a gas plate including a plurality of holes configured to supply a gas mixture into an interior of the processing chamber and a carrier ring configured to support the gas plate. The carrier ring includes an annular body and a radially inwardly projecting portion. The radially inwardly projecting portion has a first inner diameter and the annular body has a second inner diameter greater than the first inner diameter, the radially inwardly projecting portion defines a ledge, and the gas plate is arranged on the ledge of the carrier ring. A dielectric window is arranged on the gas plate above the gas plate and the carrier ring such that the gas plate is supported between the carrier ring and the dielectric window.

Abstract: An electrostatic chuck is provided. In one example, the electrostatic chuck includes a base plate, a bond layer disposed over the base plate, a ceramic plate, and a heater. The ceramic plate includes a bottom surface disposed over the bond layer and a raised top surface for supporting a substrate. The raised top surface includes an outer diameter. The heater is disposed between the bottom surface of the ceramic plate and the bond layer. The heater element includes an inner heating element and an outer heating element. The inner heating element is arranged in a central circular area adjacent to the bottom surface of the ceramic plate and the outer heating element is arranged in an annular area that surrounds the central circular area and is adjacent to the bottom surface of the ceramic plate. An outer diameter of the outer heating element is inset from an annual heater setback region of the ceramic plate.

Abstract: A thin shadow ring for a substrate processing system includes an annular body having an inner diameter and an outer diameter. The inner diameter and the outer diameter define a cross-sectional width of the annular body between the inner diameter and the outer diameter. At least two tabs extend radially outward from the annular body. The cross-sectional width of the annular body between the inner diameter and the outer diameter is less than 1.0 inch.

Abstract: A selected reject band non-RF-coupling tile includes a ground plate disposed on a first side of a printed circuit board. The selected reject band non-RF-coupling tile also includes a planar inductor disposed on a second side of the printed circuit board. The selected reject band non-RF-coupling tile also includes a conductive via structure extending through the printed circuit board. The conductive via structure electrically connects to both the ground plate and the planar inductor at a location near an interior end of the planar inductor. The selected reject band non-RF-coupling tile is used to shield enclosure walls and/or other electrical circuitry from RF fields. The selected reject band non-RF-coupling tile is also used to encapsulate an RF carrying component to block RF fields that emanate from the RF carrying component.

Abstract: A flow optimizer is disclosed for use in plasma chamber. The flow optimizer includes a ring that is disposed between a wafer support and a dielectric window defined in the plasma chamber. The ring of the flow optimizer is configured to be positioned between the wafer support and the dielectric window so that an outer edge of the ring is adjacent to side walls of the plasma chamber and an opening of the ring is substantially aligned with a diameter of the wafer support.

Abstract: A gas distribution device for a substrate processing system includes an upper plate including a first hole and a plurality of second holes and a lower plate. The lower plate includes a recessed region formed in one of an upper surface of the lower plate and a lower surface of the upper plate. The recessed region defines a plenum volume between the upper plate and the lower plate. The lower plate further includes a raised fence located within the recessed region. The fence separates the plenum volume into a first plenum and a second plenum, the first plenum is in fluid communication with the first hole, and the second plenum is in fluid communication with the plurality of second holes.

Abstract: A radio frequency filter is provided and includes a dielectric layer and a first inductor. The first inductor includes an input, a first coil disposed on a first side of the dielectric layer and connected to the input, and a second coil disposed on a second side of the dielectric layer opposite the first side. The first and second coils are planar, such that windings of the first coil are in a first layer and windings of the second coil are in a second layer. The first coil overlaps and is connected in series with the second coil. The first coil, the dielectric layer and the second coil collectively provide a capacitance of the radio frequency filter. The first inductor further includes a first via extending through the dielectric layer and connected to the first coil and the second coil and a first output connected to the second coil.

Abstract: Systems and methods for using a transformer to achieve uniformity in processing a substrate are described. One of the systems includes a primary winding having a first end and a second end. The first end is coupled to an output of an impedance matching circuit and the second end is coupled to a capacitor. The system further includes a secondary winding associated with the primary winding and coupled to a first end and a second end of a transformer coupled plasma (TCP) coil of a plasma chamber. The primary winding receives a modified radio frequency (RF) signal from the impedance matching circuit to generate a magnetic flux to induce a voltage in the secondary winding. An RF signal generated by the voltage is transferred from the secondary winding to the TCP coil.

Abstract: A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.