Abstract: A composite transistor (TC) is provided, comprising an extended drain MOS transistor (T1) and a symmetrical MOS transistor (T2) sharing a common source/drain (114b). A method is presented for fabricating an integrated circuit, comprising forming an extended drain (114a, 120) of a first conductivity type in a semiconductor body (104), forming a source (114c) of the first conductivity type in the semiconductor body (104), forming a first channel (128a) of a second conductivity type along at least a portion of a side of the extended drain (114a, 120) in the semiconductor body (104), forming a second channel (128b) of the second conductivity type along at least a portion of a side of the source (114c), and forming a shared source/drain (114b) of the first conductivity type extending between the first and second channels (128a, 128b).

Abstract: A temperature compensated photovoltaic module (20) comprised of a series of solar cells (22) having a thermally activated switch (24) connected in parallel with several of the cells (22). The photovoltaic module (20) is adapted to charge conventional batteries having a temperature coefficient (TC) differing from the temperature coefficient (TC) of the module (20). The calibration temperatures of the switches (24) are chosen whereby the colder the ambient temperature for the module (20), the more switches that are on and form a closed circuit to short the associated solar cells (22). By shorting some of the solar cells (22) as the ambient temperature decreases, the battery being charged by the module (20) is not excessively overcharged at lower temperatures. PV module (20) is an integrated solution that is reliable and inexpensive.