Abstract: Methods for determining whether a test agent inhibits a 17?-HSD3, the methods comprising: obtaining a recombinant host cell that expresses the 17?-HSD3; obtaining a reaction mixture comprising the 17?-HSD3, androstenedione, and the test agent; measuring the amount of testosterone in the reaction mixture by a scintillation proximity assay (SPA) using SPA beads conjugated with a testosterone-specific antibody, wherein when the amount of testosterone is lower in the presence of a test agent than in the absence of the test agent, the test agent is identified as an inhibitor of the 17?-HSD3.

Abstract: Methods for determining whether a test agent inhibits a 17?-HSD3, said methods comprising: obtaining a recombinant host cell that expresses said 17?-HSD3; obtaining a reaction mixture comprising said 17?-HSD3, androstenedione, and said test agent; measuring the amount of testosterone in said reaction mixture by a scintillation proximity assay (SPA) using SPA beads conjugated with a testosterone-specific antibody, wherein when the amount of testosterone is lower in the presence of a test agent than in the absence of the test agent, the test agent is identified as an inhibitor of said 17?-HSD3.

Abstract: A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.

Abstract: A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.