Abstract: Disclosed are an MPS diode device and a preparation method therefor. The MPS diode device comprises a plurality of cells arranged in parallel, wherein each cell comprises a cathode electrode, and a substrate, epitaxial layer, buffer layer, and anode electrode that are formed in succession on the cathode electrode; two active regions are formed on the side of the epitaxial layer away from the substrate; the width of forbidden band of the buffer layer is greater than the width of forbidden band of the epitaxial layer, and a material of the buffer layer and a material of the epitaxial layer are allotropes; and first openings are formed at the positions in the buffer layer opposite to the active regions, and an ohmic metal layer is formed in the first openings.

Abstract: Disclosed are an intelligent power module and a manufacturing method thereof, which relate to the technical field of electronic devices. The intelligent power module includes a substrate, wherein a chip and a plurality of conductive pins are arranged on the substrate, one end of each of the conductive pins is connected to the chip, and a solder pin is formed at an end portion of the other end of the conductive pin; and an external pin frame, including a plurality of leads, and a connection structure is formed at an end portion of one end of each of the lead; and the connection structure includes a connection portion, and support portions, wherein an arrangement direction of the support portions is the same as that of the solder pins, an accommodation space is formed between the two support portions, and the solder pin is located between the two support portions.

Abstract: Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transistor includes first and second cells which jointly include a drain electrode layer, an ohmic contact layer, a substrate layer, an epitaxial layer, an interlayer dielectric layer, and a source electrode layer, the first cell further includes a first deep well region, a second deep well region, a first shallow well region, a second shallow well region, a two first source region, a two second source region, a first gate oxide layer, and a first polysilicon gate, and the second cell further includes a third deep well region, a fourth deep well region, a third shallow well region, a fourth shallow well region, a second gate oxide layer, a third gate oxide layer, a second polysilicon gate, and a third polysilicon gate.

Abstract: Disclosed are an insulated gate bipolar transistor and a manufacturing method thereof, an electronic apparatus, and a storage medium. In the insulated gate bipolar transistor manufactured by the method for manufacturing the insulated gate bipolar transistor, a structure sequentially includes a second metal layer, an oxide layer, an epitaxial layer and a first metal layer, a manufacturing process is simple, and the insulated gate bipolar transistor is manufactured into a vertical structure, which not only can reduce a leakage current of an insulated gate bipolar transistor, improving reliability of an insulated gate bipolar transistor, but also solves a problem of an insufficient withstand voltage of a lateral insulated gate bipolar transistor, improving user experience.

Abstract: Disclosed are an insulated gate bipolar transistor and a manufacturing method thereof, an electronic apparatus, and a storage medium. In the insulated gate bipolar transistor manufactured by the method for manufacturing the insulated gate bipolar transistor, a structure sequentially includes a second metal layer, an oxide layer, an epitaxial layer and a first metal layer. A manufacturing process is simple, and the insulated gate bipolar transistor is manufactured into a vertical structure, which not only can reduce a leakage current of an insulated gate bipolar transistor, improving reliability of an insulated gate bipolar transistor, but also solves a problem of an insufficient withstand voltage of a lateral insulated gate bipolar transistor, improving user experience.

Abstract: The present disclosure relates to a method for feature construction, a method for content display and a related apparatus. The method for feature construction comprises: acquiring interaction data on a content page and loading performance data of the content page; constructing a user interaction feature according to the interaction data on the content page, and constructing a page performance feature of the content page according to the loading performance data of the content page. The user interaction feature and the page performance feature are used for training a content display model, and the content display model is used for determining target content displayed to a target user.

Abstract: The present disclosure relates to a field of chip technology, and discloses a three-phase inverter power chip and a preparation method therefor. The preparation method includes: forming active areas on a substrate and an isolation area located outside the active areas; forming a source electrode, a drain electrode and a gate electrode of a transistor in each active area; forming a first bond pad, second bond pads, third bond pads and fourth bond pads in the isolation area; the source electrode, the drain electrode and the gate electrode of the chip being extended to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto; and electrically connecting the source electrode, the drain electrode and the gate electrode of the transistor to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto.

Abstract: Disclosed are an intelligent power module and a manufacturing method thereof, which relate to the technical field of electronic devices. The intelligent power module includes a substrate, wherein a chip and a plurality of conductive pins are arranged on the substrate, one end of each of the conductive pins is connected to the chip, and a solder pin is formed at an end portion of the other end of the conductive pin; and an external pin frame, including a plurality of leads, and a connection structure is formed at an end portion of one end of each of the lead; and the connection structure includes a connection portion, and support portions, wherein an arrangement direction of the support portions is the same as that of the solder pins, an accommodation space is formed between the two support portions, and the solder pin is located between the two support portions.

Abstract: Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transistor includes first and second cells which jointly include a drain electrode layer, an ohmic contact layer, a substrate layer, an epitaxial layer, an interlayer dielectric layer, and a source electrode layer, the first cell further includes a first deep well region, a second deep well region, a first shallow well region, a second shallow well region, a two first source region, a two second source region, a first gate oxide layer, and a first polysilicon gate, and the second cell further includes a third deep well region, a fourth deep well region, a third shallow well region, a fourth shallow well region, a second gate oxide layer, a third gate oxide layer, a second polysilicon gate, and a third polysilicon gate.

Abstract: A payment method by a processing server to process payment that is independently performed between a user equipment and a payment channel server is provided. The method includes: generating, by the processing server, a payment order bound to a merchant order generated by a merchant device by determining a corresponding item ID, of a service and/or a product for purchase, that is registered with the payment channel server, the merchant order corresponding to the service and/or the product provided by the merchant device; obtaining, by the processing server, a payment voucher corresponding to the payment order; matching, by the processing server, based on the payment voucher, the merchant order bound to the payment order; and transmitting, by the processing server to the merchant device, based on the matched merchant order, a service/product providing notification for providing the service and/or the product to the user equipment.

Abstract: Disclosed are an MPS diode device and a preparation method therefor. The MPS diode device comprises a plurality of cells arranged in parallel, wherein each cell comprises a cathode electrode, and a substrate, epitaxial layer, buffer layer, and anode electrode that are formed in succession on the cathode electrode; two active regions are formed on the side of the epitaxial layer away from the substrate; the width of forbidden band of the buffer layer is greater than the width of forbidden band of the epitaxial layer, and a material of the buffer layer and a material of the epitaxial layer are allotropes; and first openings are formed at the positions in the buffer layer opposite to the active regions, and an ohmic metal layer is formed in the first openings.

Abstract: A payment method by a processing server to process payment that is independently performed between a user equipment and a payment channel server is provided. The method includes: generating, by the processing server, a payment order bound to a merchant order generated by a merchant device by determining a corresponding item ID, of a service and/or a product for purchase, that is registered with the payment channel server, the merchant order corresponding to the service and/or the product provided by the merchant device; obtaining, by the processing server, a payment voucher corresponding to the payment order; matching, by the processing server, based on the payment voucher, the merchant order bound to the payment order; and transmitting, by the processing server to the merchant device, based on the matched merchant order, a service/product providing notification for providing the service and/or the product to the user equipment.

Abstract: A payment method by a processing server to process payment that is independently performed between a user equipment and a payment channel server is provided. The method includes: generating, by the processing server, a payment order bound to a merchant order generated by a merchant device by determining a corresponding item ID, of a service and/or a product for purchase, that is registered with the payment channel server, the merchant order corresponding to the service and/or the product provided by the merchant device; obtaining, by the processing server, a payment voucher corresponding to the payment order; matching, by the processing server, based on the payment voucher, the merchant order bound to the payment order; and transmitting, by the processing server to the merchant device, based on the matched merchant order, a service/product providing notification for providing the service and/or the product to the user equipment.

Abstract: The present disclosure relates to a field of chip technology, and discloses a three-phase inverter power chip and a preparation method therefor. The preparation method includes: forming active areas on a substrate and an isolation area located outside the active areas; forming a source electrode, a drain electrode and a gate electrode of a transistor in each active area; forming a first bond pad, second bond pads, third bond pads and fourth bond pads in the isolation area; the source electrode, the drain electrode and the gate electrode of the chip being extended to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto; and electrically connecting the source electrode, the drain electrode and the gate electrode of the transistor to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto.

Abstract: A payment method by a processing server to process payment that is independently performed between a user equipment and a payment channel server is provided. The method includes: generating, by the processing server, a payment order bound to a merchant order generated by a merchant device by determining a corresponding item ID, of a service and/or a product for purchase, that is registered with the payment channel server, the merchant order corresponding to the service and/or the product provided by the merchant device; obtaining, by the processing server, a payment voucher corresponding to the payment order; matching, by the processing server, based on the payment voucher, the merchant order bound to the payment order; and transmitting, by the processing server to the merchant device, based on the matched merchant order, a service/product providing notification for providing the service and/or the product to the user equipment.

Abstract: A Demand Response (DR) physical potential evaluation method for a feeder line is provided, which includes that: a load curve of a part to be identified in a load curve of a feeder line to be evaluated is acquired; a load database is created on the basis of a historical load curve of loads of predefined types; load types and total number of the loads to be identified are determined on the basis of the load curve of the part to be identified and the load database; a physical potential of the loads of each of the types is acquired according to the load types of the loads to be identified; and an overall aggregated physical potential of the loads to be identified is obtained according to the physical potential of the loads of each of the types and a number of the loads of each of the types.

Abstract: A battery safety enclosure is provided that contains a battery pack and is attached to a vehicle with a frame. The enclosure has a flat surface that is close to and overlays a flat surface on the frame. The flat surface includes a vent port that is covered by a plug. If the battery pack should fail and release gas, the plug separates from the vent port and pressure is released in a controlled fashion. The flat surface of the enclosure further contains release channels that are recessed from the flat surface on the enclosure. The release channels slow and disperse the release of flammable gas. The safety enclosure may contain a control circuit board that controls the charging and discharging of the battery.

Abstract: A Demand Response (DR) physical potential evaluation method for a feeder line is provided, which includes that: a load curve of a part to be identified in a load curve of a feeder line to be evaluated is acquired; a load database is created on the basis of a historical load curve of loads of predefined types; load types and total number of the loads to be identified are determined on the basis of the load curve of the part to be identified and the load database; a physical potential of the loads of each of the types is acquired according to the load types of the loads to be identified; and an overall aggregated physical potential of the loads to be identified is obtained according to the physical potential of the loads of each of the types and a number of the loads of each of the types.