Abstract: A semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

Abstract: A method of fabricating a semiconductor laser device is disclosed in which the device comprises one or more ion-implanted regions as a means to decrease the occurrence of device failures attributable to dark-line defects. The ion-implanted regions, which are formed between the laser gain cavity and the regions of probable dark-line defect origination, serve to modify the electrical, optical, and mechanical properties of the device lattice structure, thus reducing or eliminating the propagation of dark-line defects emanating from constituent defects or bulk material imperfections which may be present in the device.

Abstract: An improved alloyed ohmic contact to n-type GaAs is provided utilizing a Si-based metallization of Si/Au/Ni and exhibiting low contact resistivity and high thermal stability. An improved process for fabricating the inventive contact is also provided comprising the step of first depositing the Si film on the GaAs substrate, thereby simplifying the fabrication of monolithically integrated devices, particularly advanced electro-optic devices, by incorporating self-aligned Si-based contacts in the process. A further improvement is provided in the use of a lift-off-defined Si layer as a reactive-ion etch mask to serve as the self-aligned contact in the process, thereby eliminating a critical photolithographic step of aligning the contact metallization.