Patents by Inventor Dana Pitzer

Dana Pitzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9046464
    Abstract: A device for detecting at least one substance of a fluid, has a piezoacoustic thin film resonator with a piezoelectric layer on which electrode layers are arranged, and an adsorption surface for adsorbing the fluid substance, wherein the piezoelectric and electrode layers and the adsorption surface are designed and arranged on each other such that by electrically activating the electrode layers, an excitation alternating field can be coupled into the piezoelectric layer. The thin film resonator can be excited to a resonance oscillation frequency fR which depends on an amount of the substance adsorbed on the adsorption surface because of an excitation alternating field coupled into the piezoelectric layer. An electrical insulating layer is arranged directly on a side of one of the electrode layers facing away from the piezoelectric layer. Particularly advantageous is the combination of an aluminum electrode layer and a silicon dioxide insulating layer.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: June 2, 2015
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Thomas Huber, Martin Nirschl, Dana Pitzer, Matthias Schreiter
  • Publication number: 20130260026
    Abstract: A method for maufacturing a thin film on a substrate may include: coupling the substrate to a pretensioning facility such that the substrate with the pretensioning facility is isotropically extended in the surface, wherein the substrate is held elastically under pressure with a predetermined pretension; depositing a thin film material on the substrate with a deposition method, in which by applying heat to the thin film material, this is deposited on the substrate so that a thin film with the thin film material is embodied on the substrate; decoupling the substrate from the pretensioning facility; cooling the thin film accompanied by a shrinkage, wherein the predetermined pretension is at least high enough that the appearance of a tensile stress in the thin film is prevented in the case of shrinkage.
    Type: Application
    Filed: March 27, 2013
    Publication date: October 3, 2013
    Applicant: Siemens Aktiengesellschaft
    Inventors: Dana Pitzer, Matthias Schreiter, Carsten Schuh, Thorsten Steinkopff
  • Patent number: 8536764
    Abstract: In an arrangement of at least one piezoacoustic resonator on a substrate surface, the resonator has an piezoelectric layer, an electrode and a further electrode arranged such that activation of the electrodes leads to a resonance oscillation, the substrate surface is formed by an acoustic mirror integrated in the substrate for acoustically insulating substrate and resonator, and with a resonance frequency evaluation device being connected to the electrodes by tracks being routed through a mirror opening. The acoustic mirror has a Bragg reflector having ?/4-thick layers of different acoustic impedance. The topmost layer is made of silicon dioxide acting as an insulation layer in the mirror opening for electrically insulating the conductor track and the electrically conductive Bragg reflector layers. The arrangement is used as a physical transducer of a device for detecting a substance of a fluid, in particular of a fluid in the form of a liquid (biosensor).
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: September 17, 2013
    Assignee: Siemens Aktiengesellschaft
    Inventors: Dana Pitzer, Matthias Schreiter
  • Publication number: 20110248700
    Abstract: A device for detecting at least one substance of a fluid, has a piezoacoustic thin film resonator with a piezoelectric layer on which electrode layers are arranged, and an adsorption surface for adsorbing the fluid substance, wherein the piezoelectric and electrode layers and the adsorption surface are designed and arranged on each other such that by electrically activating the electrode layers, an excitation alternating field can be coupled into the piezoelectric layer. The thin film resonator can be excited to a resonance oscillation frequency fR which depends on an amount of the substance adsorbed on the adsorption surface because of an excitation alternating field coupled into the piezoelectric layer. An electrical insulating layer is arranged directly on a side of one of the electrode layers facing away from the piezoelectric layer. Particularly advantageous is the combination of an aluminum electrode layer and a silicon dioxide insulating layer.
    Type: Application
    Filed: September 29, 2009
    Publication date: October 13, 2011
    Inventors: Thomas Huber, Martin Nirschl, Dana Pitzer, Matthias Schreiter
  • Publication number: 20110089786
    Abstract: In an arrangement of at least one piezoacoustic resonator on a substrate surface, the resonator has an piezoelectric layer, an electrode and a further electrode arranged such that activation of the electrodes leads to a resonance oscillation, the substrate surface is formed by an acoustic mirror integrated in the substrate for acoustically insulating substrate and resonator, and with a resonance frequency evaluation device being connected to the electrodes by tracks being routed through a mirror opening. The acoustic mirror has a Bragg reflector having ?/4-thick layers of different acoustic impedance. The topmost layer is made of silicon dioxide acting as an insulation layer in the mirror opening for electrically insulating the conductor track and the electrically conductive Bragg reflector layers. The arrangement is used as a physical transducer of a device for detecting a substance of a fluid, in particular of a fluid in the form of a liquid (biosensor).
    Type: Application
    Filed: June 15, 2009
    Publication date: April 21, 2011
    Inventors: Dana Pitzer, Matthias Schreiter
  • Publication number: 20030164450
    Abstract: The invention relates to a device for detecting thermal radiation (3), comprising at least one thermal detector element (2) that converts the thermal radiation into an electric signal (4). The inventive device is further provided with at least one focusing element (12) that focuses the thermal radiation onto the detector element. The focusing element is for example a lens that consists of a semiconducting material such a silicon. Preferably, the focusing element is integrated in the detection window for detecting the thermal radiation, said detection window consisting of a semiconducting material.
    Type: Application
    Filed: March 24, 2003
    Publication date: September 4, 2003
    Inventors: Rainer Bruchhaus, Dana Pitzer, Axel Schubert, Bernhard Winkler
  • Patent number: 6440210
    Abstract: A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2<TC1<T1. After the ending of the application process, the heating of the substrate is also discontinued so that the substrate cools. As a result of the cooling the Zr-deficient layer and then the Zr-abundant layer reach their Curie temperature, and change into the ferroelectric phase and become self-polarized in the process. The polarization already present in the Zr-deficient layer induces the polarization in the Zr-abundant layer, with the result that both layers are self-polarized after the cooling process.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: August 27, 2002
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rainer Bruchhaus, Dana Pitzer, Robert Primig, Matthias Schreiter
  • Patent number: 6139971
    Abstract: A layer structure has a substrate, a platinum layer and a ferroelectric layer. In order to improve adhesion between the platinum layer and the substrate, the structure has an intermediate layer of amorphous aluminum oxide. The intermediate layer also improves the morphology of the ferroelectric layer and ensures that the layer structure is uniform.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: October 31, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rainer Bruchhaus, Dana Pitzer
  • Patent number: 6108191
    Abstract: A thin-film technology multi-layer capacitor with enhanced capacitance and/or reduced space requirement. The dielectric layers of which are alternately disposed between electrode layers on a substrate. Through alternate electrode layer connections, parallel interconnection of the individual capacitor layers is obtained. The result is that the individual capacitances are additive, while the temperature response can be optimized by a suitable choice or combination of different dielectric layers.
    Type: Grant
    Filed: November 23, 1998
    Date of Patent: August 22, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Rainer Bruchhaus, Dana Pitzer, Robert Primig, Wolfram Wersing, Wolfgang Honlein
  • Patent number: 6051485
    Abstract: A method of producing a platinum-metal structure or pattern on a substrate, which includes the steps of applying a silicon oxide layer to the substrate; applying a mask to the silicon oxide layer which is formed with an opening at a location thereof at which the platinum-metal structure or pattern is to be produced; etching the silicon oxide layer so that the substrate surface area exposed by the opening formed in the mask is larger than the opening in the mask; applying a platinum-metal layer to the mask and the exposed substrate surface area; and removing the silicon oxide layer in an etching process, so that the platinum metal present on the mask is removed simultaneously therewith, and the platinum metal present on the substrate surface forms the platinum-metal pattern or structure.
    Type: Grant
    Filed: April 24, 1998
    Date of Patent: April 18, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Gunther Schindler, Walter Hartner, Dana Pitzer