Abstract: A system for processing a workpiece includes a dry process chamber, such as a plasma etching chamber, and a wet process chamber, such as a spin/spray chamber. Gas supply lines supply gases to the dry process chamber, and to a chemical solution generator. A liquid supply line supplies a liquid, such as de-ionized water, to the chemical solution generator. The chemical solution generator manufactures liquid chemical solutions in situ, for point of use in the wet process chamber. The system allows for both wet and dry processing with few or no separate liquid chemical supply lines.

Abstract: A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.

Abstract: A method for cleaning vias, trenches, or other features on a workpiece, such as a semiconductor wafer, includes pre-heating the wafer to a desired temperature. A heated processing or cleaning fluid is then applied to the workpiece. The workpiece may be heated to a temperature higher than the temperature of the processing fluid, to increase the chemical reaction efficiency between the processing fluid and the workpiece features. The workpiece may be heated before or after being loaded into a processing chamber.

Abstract: A centrifugal workpiece processor for processing semiconductor wafers and similar workpieces includes a head which holds and spins the workpiece. The head includes a rotor having a gas system. Gas is sprayed or jetted from inlets in the rotor to create a rotational gas flow. The rotational gas flow causes pressure conditions which hold the edges of a first side of the workpiece against contact pins on the rotor. The rotor and the workpiece rotate together. Guide pins adjacent to a perimeter may help to align the workpiece with the rotor. An angled surface helps to deflect spent process liquid away from the workpiece. The head is moveable into multiple different engagement positions with a bowl. Spray nozzles in the bowl spray a process liquid onto the second side of the workpiece, as the workpiece is spinning, to process the workpiece. A moving end point detector may be used to detect an end point of processing.

Abstract: In a method for cleaning a wafer, the wafer is placed a processing chamber. A layer or film of liquid is provided on the wafer. Electrically charged aerosol droplets of a liquid are formed and directed to the workpiece. The charged aerosol particles accumulate on the workpiece. This creates an electrical charge on the workpiece. Contaminant particles on the workpiece are released and/or repelled by the electrical charge and are carried away in the liquid layer. The liquid layer is optionally continuously replenished with fresh liquid. The liquid layer may be thinned out in a localized aerosol impingement area, via a jet of gas, to allow the electrical charge of the aerosol to better collect on or near the surface of the workpiece.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: An apparatus for cleaning of a microelectronic workpiece having a front side, a back side, and an edge includes a chamber and a fixture within the chamber that is adapted to hold one or more microelectronic workpieces. At least one transducer is located within the chamber and preferably adjacent to the edge of the microelectronic workpiece. The method includes the steps of immersing the front side, back side, and edge of the microelectronic workpiece in a first processing fluid while preferably rotating the microelectronic workpiece. The microelectronic workpiece is then rinsed and dried and immersed in a second processing fluid such that the back side and edge of the microelectronic workpiece are immersed in the second processing fluid, while preferably rotating the microelectronic workpiece, without exposing the front surface of the microelectronic workpiece to the second processing fluid. Vibrational energy, preferably in the form of megasonics, is introduced during at least one of the immersions steps.

Abstract: A device for the side-specific cleaning of a microelectronic workpiece having a front side, a back side, and an edge includes a chamber, a fixture within the chamber that is adapted to hold one or more microelectronic workpieces. At least one transducer is located within the chamber and preferably adjacent to the edge of the microelectronic workpiece. The method includes the steps of immersing the front side, back side, and edge of the microelectronic workpiece in a first processing fluid while preferably rotating the microelectronic workpiece. The microelectronic workpiece is then rinsed and dried and immersed in a second processing fluid such that the back side and edge of the microelectronic workpiece are immersed in the second processing fluid, while preferably rotating the microelectronic workpiece, without exposing the front surface of the microelectronic workpiece to the second processing fluid.

Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. Preferably, the liquid includes water, and may also include a chemical. Steam may also be used with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. Sonic or electromagnetic energy may also be introduced to the workpiece.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: A processor and method for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract: A device for the side-specific cleaning of a microelectronic workpiece having a front side, a back side, and an edge includes a chamber, a fixture within the chamber that is adapted to hold one or more microelectronic workpieces. At least one transducer is located within the chamber and preferably adjacent to the edge of the microelectronic workpiece. The method includes the steps of immersing the front side, back side, and edge of the microelectronic workpiece in a first processing fluid while preferably rotating the microelectronic workpiece. The microelectronic workpiece is then rinsed and dried and immersed in a second processing fluid such that the back side and edge of the microelectronic workpiece are immersed in the second processing fluid, while preferably rotating the microelectronic workpiece, without exposing the front surface of the microelectronic workpiece to the second processing fluid.

Abstract: In a post chemical-mechanical polishing (CMP) procedure for cleaning a workpiece, a cleaning solution is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the workpiece. The cleaning solution is uniformly applied to the workpiece. The volumes of solutions used in the scrubbing process is reduced. A thin oxide layer is etched. A hydrophilic surface state is maintained. The workpiece is then rinsed and dried in a centrifugal processing between upper and lower rotors. A high level clean is achieved while consumption of rinsing and drying fluids is reduced.

Abstract: A processor for cleaning, rinsing, and drying workpieces includes a process vessel, an ozone injection system for introducing ozone gas into the process vessel, a liquid injection system for introducing a processing fluid into the process vessel, and a drying system for delivering a drying fluid to the process vessel. The processing fluid is introduced into the process vessel such that the processing fluid lies beneath a workpiece. Ozone gas is introduced into the process vessel. The workpiece is then bathed in the processing fluid. A drying fluid is introduced into the process vessel while the processing fluid is evacuated from the process vessel. Microelectronic workpieces can be cleaned and dried in a single vessel, reducing the equipment and space used in manufacturing.

Abstract: A processor for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.

Abstract: A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

Abstract: Workpieces requiring low levels of contamination, such as semiconductor wafers, are loaded into a rotor within a process chamber. The process chamber has a horizontal drain opening in its cylindrical wall. The chamber is closed via a door. A process or rinsing liquid is introduced into the chamber. The liquid rises to a level so that the workpieces are immersed in the liquid. The chamber slowly pivots or rotates to move the drain opening down to the level of the liquid. The liquid drains out through the drain opening. The drain opening is kept near the surface of the liquid to drain off liquid at a uniform rate. An organic solvent vapor is introduced above the liquid to help prevent droplets of liquid from remaining on the workpieces as the liquid drains off. The rotor spins the workpieces to help to remove any remaining droplets by centrifugal force.

Abstract: A processor for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.