Patents by Inventor Dana Stanescu

Dana Stanescu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic tunnel junction device and writing/reading for said device
    Patent number: 7480175
    Abstract: The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (I1), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: January 20, 2009
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bernard Dieny, Ricardo Sousa, Dana Stanescu
  • MAGNETIC TUNNEL JUNCTION DEVICE AND WRITING/READING FOR SAID DEVICE
    Publication number: 20070263434
    Abstract: The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5 W/m° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (11), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.
    Type: Application
    Filed: July 19, 2007
    Publication date: November 15, 2007
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Bernard Dieny, Ricardo Sousa, Dana Stanescu
  • Magnetic tunnel junction device and writing/reading method for said device
    Publication number: 20060281258
    Abstract: The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5 W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (11), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (12) in the opposite direction.
    Type: Application
    Filed: October 6, 2004
    Publication date: December 14, 2006
    Inventors: Bernard Dieny, Ricardo Sousa, Dana Stanescu