Abstract: A sense amplifier circuit includes: a charge module configured to charge a set signal node and a reset signal node according to a clock signal; and a sense module configured to sense and amplify a differential input signal according to the clock signal; where, the sense module includes a first amplification circuit, a second amplification circuit, and a cross hopping transfer circuit cross-connected between the first amplification circuit and the second amplification circuit. The cross hopping transfer circuit is configured to transfer a valid signal of a newly started amplification circuit to another amplification circuit if sensing is completed and the differential input signal hops, such that a set signal/reset signal remains unchanged. A flip-flop includes the sense amplifier circuit.

Abstract: The present disclosure provides a sense amplifier circuit and a flip-flop. The sense amplifier circuit includes: a charge module configured to charge a set signal node and a reset signal node according to a clock signal; and a sense module configured to sense and amplify a differential input signal according to the clock signal; where, the sense module includes a first amplification circuit, a second amplification circuit, and a cross hopping transfer circuit cross-connected between the first amplification circuit and the second amplification circuit. The cross hopping transfer circuit is configured to transfer a valid signal of a newly started amplification circuit to another amplification circuit if sensing is completed and the differential input signal hops, such that a set signal/reset signal remains unchanged.

Abstract: Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.

Abstract: Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.