Abstract: A sense amplifier circuit includes: a charge module configured to charge a set signal node and a reset signal node according to a clock signal; and a sense module configured to sense and amplify a differential input signal according to the clock signal; where, the sense module includes a first amplification circuit, a second amplification circuit, and a cross hopping transfer circuit cross-connected between the first amplification circuit and the second amplification circuit. The cross hopping transfer circuit is configured to transfer a valid signal of a newly started amplification circuit to another amplification circuit if sensing is completed and the differential input signal hops, such that a set signal/reset signal remains unchanged. A flip-flop includes the sense amplifier circuit.

Abstract: The present invention relates to the technical field of photosensitizers, and particularly to a near-infrared nano-photosensitizer and a preparation method and use thereof. The near-infrared nano-photosensitizer in the present invention is modified by conjugation extension of the boron dipyrromethene core, achieving absorption and emission spectra close to the near-infrared region. A polyfluoroalkyl group and a polyethylene glycol group are introduced to the boron dipyrromethene structure to obtain an amphiphilic photosensitizer. By means of the strong fluorine-fluorine interaction between the polyfluoroalkyl group and the hydrophilic interaction of the polyethylene glycol group, a nano-photosensitive micelle with an ultra-low CMC value is ultimately constructed. Boron dipyrromethene is induced by fluorine-fluorine interaction to undergo J-aggregation, causing the maximum absorption peak to red-shift to the near-infrared region, beneficial to the deep phototherapy of tumors.

Abstract: The present disclosure provides a sense amplifier circuit and a flip-flop. The sense amplifier circuit includes: a charge module configured to charge a set signal node and a reset signal node according to a clock signal; and a sense module configured to sense and amplify a differential input signal according to the clock signal; where, the sense module includes a first amplification circuit, a second amplification circuit, and a cross hopping transfer circuit cross-connected between the first amplification circuit and the second amplification circuit. The cross hopping transfer circuit is configured to transfer a valid signal of a newly started amplification circuit to another amplification circuit if sensing is completed and the differential input signal hops, such that a set signal/reset signal remains unchanged.

Abstract: Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.

Abstract: Aspects of the disclosure provide a method for wafer warpage control. The method includes forming a filling structure in a slit opening on a wafer. Further, the method includes measuring a warpage parameter of the wafer, and determining a thermal profile to adjust a warpage parameter into a target range based on the warpage parameter. Then, the method includes performing a process having the determined thermal profile to adjust the warpage parameter into the target range.