Abstract: A method for in-situ doping of deposited silicon is disclosed. The method utilizes low temperature of approximately 560.degree. C., low pressure of approximately 300 mTorr, and low phosphine to silane ratio of approximately 0.0008 to form phosphorus doped silicon. The method is manufacturable in an automated LPCVD reactor. It allows relatively uniform defect free silicon films of low resistivity and good conformality and step coverage to be deposited at sufficient deposition rates over large semiconductor wafer lots for high wafer throughput.

Abstract: A vertical low pressure chemical vapor deposition, LPCVD, reactor that may be used to form deposition films on semiconductor wafers is disclosed. The vertical LPCVD reactor has a reaction chamber with a top portion and a bottom portion. A furnace heats the reaction chamber. Deposition gases are introduced into the bottom portion of the reaction chamber by a gas tube having a substantial portion heated by the furnace. Deposition gases are introduced into the top portion of the reaction chamber by a gas tube that is shaped so that a substantial portion of it overlies the top portion of the reaction chamber and is heated by the furnace. By heating the substantial portion of the gas tube overlying the top portion of the reaction chamber, the deposition gases passing through this tube are heated before they enter the top portion of the reaction chamber. This improves the uniformity of deposited films on semiconductor wafers residing in the top portion of the reaction chamber.