Patents by Inventor Dane L. Scott

Dane L. Scott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Forming a semiconductor device feature using acquired parameters
    Patent number: 7554108
    Abstract: In one embodiment, a controller coupled to a focused ion beam tool can execute instructions to acquire parameters for a feature of a semiconductor device, determine a data array using the parameters, and cause the focused ion beam tool to perform tool iterations to form the feature on the semiconductor device using the data array. Other embodiments are described and claimed.
    Type: Grant
    Filed: May 3, 2006
    Date of Patent: June 30, 2009
    Assignee: Intel Corporation
    Inventors: Dane L. Scott, Kevin J. Vasquez
  • Forming a semiconductor device feature using acquired parameters
    Patent number: 7081369
    Abstract: In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.
    Type: Grant
    Filed: February 28, 2003
    Date of Patent: July 25, 2006
    Assignee: Intel Corporation
    Inventors: Dane L. Scott, Kevin J. Vasquez
  • Forming a semiconductor device feature using acquired parameters
    Publication number: 20040241891
    Abstract: In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.
    Type: Application
    Filed: May 19, 2004
    Publication date: December 2, 2004
    Inventors: Dane L. Scott, Kevin J. Vasquez
  • FORMING A SEMICONDUCTOR DEVICE FEATURE USING ACQUIRED PARAMETERS
    Publication number: 20040171178
    Abstract: In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.
    Type: Application
    Filed: February 28, 2003
    Publication date: September 2, 2004
    Inventors: Dane L. Scott, Kevin J. Vasquez
  • Focused ion beam etching of copper with variable pixel spacing
    Patent number: 6509276
    Abstract: A method including introducing a focused ion beam to a metal material on a substrate within a processing chamber and etching the metal material with variable pixel spacing.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: January 21, 2003
    Assignee: Intel Corporation
    Inventor: Dane L. Scott
  • Focused Ion beam etching of copper with variable pixel spacing
    Publication number: 20020151182
    Abstract: A method including introducing a focused ion beam to a metal material on a substrate within a processing chamber and etching the metal material with variable pixel spacing.
    Type: Application
    Filed: April 18, 2002
    Publication date: October 17, 2002
    Inventor: Dane L. Scott
  • Focused ion beam etching of copper
    Patent number: 6407001
    Abstract: A method including introducing a focus ion beam and an interactive species to a metal material on a substrate within a processing chamber and etching the metal material.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: June 18, 2002
    Assignee: Intel Corporation
    Inventor: Dane L. Scott