Abstract: A back-contact cell includes a silicon wafer and electrode structures. A first electrode region, a second electrode region, and a non-electrode region are formed on a back surface of the silicon wafer. The non-electrode region is located between the first electrode region and the second electrode region. An electrode structure located in the first electrode region includes a first boundary grid line. An electrode structure located in the second electrode region includes a second boundary grid line. The first boundary grid line and the second boundary grid line have opposite polarities. Disconnection rates of both the first boundary grid line and the second boundary grid line are less than or equal to 5%.

Abstract: The present disclosure relates to the technical field of solar cells. Disclosed are a back contact cell module and a system. The assembly includes a cell string, an insulation bar, and a bus bar; the cell string includes a first cell piece and a second cell piece, which are adjacent to each other; the insulation bar is provided on a backlight surface of the first cell piece; a second ribbon is connected to the second cell piece and the bus bar, respectively; and the insulation bar blocks the second ribbon and the first cell piece.

Abstract: A method for removing an undesired coating from a front face of a crystalline silicon solar cell includes: S1: depositing an Al2O3 film, an SiO2 film, and an SiNx film on a back face of a silicon wafer to form a backside passivation film, and forming an undesired coating on an edge of the front face of the silicon wafer; S2: preparing an aqueous film on a surface of the backside passivation film of the product obtained in S1; S3: passing the product obtained in S2 through an acid tank to remove the undesired coating; S4: passing the product obtained in S3 through a water tank to remove a residual treatment solution; and S5: drying the product obtained in S4.

Abstract: A method for removing an undesired coating from a front face of a crystalline silicon solar cell includes: S1: depositing an Al2O3 film, an SiO2 film, and an SiNx film on a back face of a silicon wafer to form a backside passivation film, and forming an undesired coating on an edge of the front face of the silicon wafer; S2: preparing an aqueous film on a surface of the backside passivation film of the product obtained in S1; S3: passing the product obtained in S2 through an acid tank to remove the undesired coating; S4: passing the product obtained in S3 through a water tank to remove a residual treatment solution; and S5: drying the product obtained in S4.