Patents by Inventor Danfeng PAN

Danfeng PAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Micro panchromatic QLED array device based on quantum dot transfer process of deep silicon etching templates, and preparation method therefor
    Patent number: 11050004
    Abstract: A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: June 29, 2021
    Assignee: NANJING UNIVERSITY
    Inventors: Bin Liu, Di Jiang, Junchi Yu, Xuan Wang, Danfeng Pan, Zili Xie, Yugang Zhou, Dunjun Chen, Xiangqian Xiu, Rong Zhang
  • MICRO PANCHROMATIC QLED ARRAY DEVICE BASED ON QUANTUM DOT TRANSFER PROCESS OF DEEP SILICON ETCHING TEMPLATES, AND PREPARATION METHOD THEREFOR
    Publication number: 20210057614
    Abstract: A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.
    Type: Application
    Filed: November 11, 2019
    Publication date: February 25, 2021
    Applicant: NANJING UNIVERSITY
    Inventors: BIN LIU, Di JIANG, Junchi YU, Xuan WANG, Danfeng PAN, Zili XIE, Yugang ZHOU, Dunjun CHEN, Xiangqian XIU, Rong ZHANG