Abstract: The present disclosure relates to a package structure, a method for forming the same, and a semiconductor structure. The package structure comprises: a first substrate; a second substrate, located above the first substrate; a package body, located between the first substrate and the second substrate, the package body comprising a semiconductor chip, a functional device, and a plurality of first interconnection structures located on at least one side of the semiconductor chip, the first interconnection structures electrically connecting the first substrate to the second substrate, the plurality of the first interconnection structures located on the same side of the semiconductor chip are arranged at intervals, and the functional device is located within an interval area between the adjacent first interconnection structures.

Abstract: A wafer-scale system in package structure includes: a silicon substrate; a plurality of functional sub-modules arranged in an array mounted on the upper surface of the silicon substrate; a warping and stress adjustment structure mounted on the upper surface of the silicon substrate at the edges of the functional sub-modules; a stress cushioning flexible member structure mounted on the upper surface of the silicon substrate at the corner heads of the functional sub-modules; edge dummy devices of different sizes mounted on the upper surface of the edge area of the silicon substrate outside the array of the functional sub-modules; and a molding layer located on the upper surface of the silicon substrate, covering the functional sub-modules, the warping and stress adjustment structure, the stress cushioning flexible member structure and edge dummy devices.

Abstract: The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes: a lower package, an upper package disposed above the lower package, and a first redistribution stack layer that is disposed between the lower package and the upper package and is electrically connected to the lower package and the upper package. The lower package includes a first prefabricated redistribution stack layer and a first plastic packaging layer surrounding the first prefabricated redistribution stack layer. A minimum line width and line spacing of at least one first prefabricated conductive layer in the first prefabricated redistribution stack layer is less than a minimum line width and line spacing of at least one first conductive layer in the first redistribution stack layer.

Abstract: The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes a lower package, an upper package and a first redistribution stack layer disposed between the lower package and the upper package, wherein the first redistribution stack layer is electrically connected to the lower package and the upper package; the lower package includes a prefabricated substrate and a first plastic packaging layer surrounding the periphery of the prefabricated substrate; and the minimum line width/line spacing of the first redistribution stack layer is less than the minimum line width/line spacing of the prefabricated substrate. The lower package includes the prefabricated substrate and the first redistribution stack layer is disposed above the prefabricated substrate and has the minimum line width/line spacing less than that of the prefabricated substrate, so that more chips and/or device packages are integrated in the packaging structure.

Abstract: The present invention provides a package structure with an inductor and a manufacturing method thereof, the inductor and the interconnection component are used as n second package module, and stacked with other components such as the first package module to form a stack-like package structure. The first package module is provided with other electronic elements. Then the first and second package modules can be synchronously subjected to package manufacturing, which improves the production efficiency. Additionally, the soldering balls with different heights are formed on the first faces of the interconnecting structural component and the inductive device by adjusting the consumption of soldering paste, which make the second faces of the inductor and the interconnection component are coplanar, then inductor with different heights can form a flat interconnecting plane, which makes the sequential process such as pasting and mounting can be conveniently performed.

Abstract: A semiconductor device has a substrate formed on a first carrier. A semiconductor die is mounted on the substrate. An interconnect structure is formed on a second carrier. A copper pillar is formed on the substrate or interconnect structure. The interconnect structure is disposed over the substrate with the copper pillar and semiconductor die between the substrate and interconnect structure. The first carrier and second carrier are removed after disposing the interconnect structure over the substrate. A system-in-package (SiP) is mounted to the substrate opposite the semiconductor die after removing the first carrier.

Abstract: A front opening unified pod has a housing and a plurality of horizontal support members disposed within the housing and adapted to accommodate a plurality of semiconductor wafers or panels. The plurality of semiconductor wafers or panels have a different size or shape, such as circular and rectangular. A first one of the plurality of horizontal support members has a wing to support the plurality of different size or shape semiconductor wafers or panels. The plurality of horizontal support members has a first side horizontal support member, a second side horizontal support member, and a center horizontal support member disposed between the first side horizontal support member and the second side horizontal support member. The plurality of horizontal support members is insertable into the housing. One or more of the plurality of horizontal support members has an opening for laser identification.

Abstract: A wafer-scale system-in-package structure and a forming method thereof are disclosed. The package structure includes: a substrate, where the substrate includes an upper surface and a lower surface that are opposite to each other; a first molding layer that wraps the plurality of semiconductor chips and the upper surface of the substrate; external protrusions on the lower surface of the substrate; and a second molding layer that wraps side surfaces of the plurality of external protrusions and the lower surface of the substrate, where a thickness of the second molding layer is less than a thickness of the first molding layer, and at least one of the coefficient of thermal expansion or Young's modulus of the second molding layer is equal to or higher than that of the first molding layer. In this way, warpage of the system-in-package structure can be effectively controlled.

Abstract: The present invention provides an antenna packaging structure and a manufacturing method thereof. An antenna and a chip are respectively disposed on two sides of a substrate layer, antenna layers are formed by an antenna support member, a first antenna layer located above the antenna support member and a second antenna layer located below the antenna support member together, and interlayer dielectrics of the antenna support member and the antenna layers are low dielectric loss materials, so that a heterogeneous and isomerous antenna structure is formed, thereby reducing the problems such as current leakage and stray capacitance in the packaging structure caused by dielectric loss, and reducing a size of the antenna packaging structure.

Abstract: The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes an interposer, chips, and warpage adjustment structures, wherein the interposer includes a first surface and a second surface opposite thereto, and the chips are electrically connected to the first surface of the interposer; the warpage adjustment structures are symmetrically distributed with respect to a center of the first surface; and each of the warpage adjustment structures include a warpage adjustment piece and/or a cavity filled with a plastic packaging material, the warpage adjustment piece is disposed on the first surface, and the cavity is located outside conducting structures and sinks inward along the first surface. By cooperation between the warpage adjustment pieces and the cavities filled with the plastic packaging material, the warpage of the interposer in horizontal and vertical directions can be reduced.

Abstract: A semiconductor device has a semiconductor assembly and an antenna substrate formed separate from the semiconductor assembly and mounted to the semiconductor assembly. A bonding material is disposed between the antenna substrate and semiconductor assembly. An encapsulant is deposited over the antenna substate. The encapsulant may be planar or have encapsulant bumps. The bonding material extends over a side surface of the antenna substrate. The antenna substrate has a first antenna substrate and a second antenna substrate disposed over the semiconductor assembly. The first antenna substrate is offset with respect to the second antenna substrate in the horizontal and/or vertical directions. The antenna substrate can fan out from the semiconductor assembly. The semiconductor assembly can have multiple layers of core material with different coefficient of thermal expansions. A heat sink or shielding layer can be formed over the antenna substrate and semiconductor assembly.

Abstract: A semiconductor device has an electrical component and a first interconnect structure disposed adjacent to the electrical component. The electrical component can be a direct metal bonded semiconductor die or a flipchip semiconductor die. The first interconnect structure can be an interposer unit or a conductive pillar. A split antenna is disposed over the electrical component and first interconnect structure. The split antenna has a first antenna section and a second antenna section with an adhesive material disposed between the first antenna section and second antenna section. A second interconnect structure is formed over the electrical component and first interconnect structure. The second interconnect structure has one or more conductive layers and insulating layers. The first interconnect structure and second interconnect structure provide a conduction path between the electrical component and split antenna. An encapsulant is deposited around the electrical component and first interconnect structure.

Abstract: A semiconductor device has a first interconnect structure. A first bridge die is disposed over the first interconnect structure. An encapsulant is deposited over the first bridge die. A second interconnect structure is formed over the first bridge die and encapsulant. A second bridge die is disposed over the second interconnect structure.

Abstract: The present invention provides an SIP package structure. The SIP package structure comprises a first module, a second module and a shielding assembly, wherein the first module and the second module are horizontally distributed or vertically stacked; electromagnetic sensitive frequencies of the first module and the second module are different; the shielding assembly comprises a first shielding structure covering the first module and a second shielding structure covering the second module; and at least part of the first shielding structure and/or at least part of the second shielding structure are/is disposed between the first module and the second module.

Abstract: The present disclosure relates to a package structure and a method for forming the same. The package structure includes: a first surface and a second surface that are opposite, passive devices mounted on the first surface of the substrate; a first molding layer encapsulating the passive devices and covering the first surface of the substrate; a first chip comprising a back face and a functional face that are opposite; metal connection structures each comprising a horizontal metal strip and a vertical metal pin electrically connected to the horizontal metal strip; a second molding layer encapsulating the metal connection structures and the first chip and covering the second surface of the substrate; and first solder bumps on the exposed top surfaces of the external terminals.

Abstract: The present disclosure relates to a package structure and a method for forming the same. The package structure includes: a plurality of second interconnect metal traces and bonding pads in a same plane; a plurality of first surface metal bumps and first interconnect metal traces disposed on the first surfaces of the second interconnect metal traces; a plurality of passive devices correspondingly mounted on top surfaces of the first surface metal bumps; a first molding layer encapsulating the passive devices, the first surface metal bumps, and the first interconnect metal traces, and covering the first surfaces of the bonding pads; a dielectric layer covering the second surfaces of the second interconnect metal traces and a bottom surface of the first molding layer; a first chip having wire bonding pads; and metal wires electrically connecting the wire bonding pads to the second surfaces of the bonding pads.

Abstract: The present disclosure discloses a package structure and a manufacturing method thereof. The package structure includes a first substrate, a second substrate, a first chip, a second chip, a heat sink and inter-board connection structures. The second substrate is provided with a first opening penetrating through an upper surface and a lower surface of the second substrate. The first chip is mounted to an upper surface of the first substrate, and the first chip is electrically connected to the first substrate. The second substrate is mounted to the upper surface of the first substrate. The inter-board connection structures are positioned between the lower surface of the second substrate and the upper surface of the first substrate, and the second substrate is electrically connected to the first substrate through the inter-board connection structures.

Abstract: The present invention provides a fan-out package structure and a method for manufacturing the same. The fan-out package structure includes at least one chip and at least one redistribution layer on a functional surface side of the chip, and the redistribution layer includes a dielectric layer and a metal wiring layer distributed within the dielectric layer. The fan-out package structure further includes at least one dummy wafer on the redistribution layer, and the dummy wafer is insulated from the chip and in contact with the metal wiring layer. By providing the dummy wafer on the redistribution layer and configuring the dummy wafer to connect to the metal wiring layer, the dummy wafer can not only function to support the structure and suppress the warpage, but also form a continuous heat dissipation channel, thereby improving thermal management capability of the fan-out package structure.

Abstract: A front opening unified pod has a housing and a plurality of horizontal support members disposed within the housing and adapted to accommodate a plurality of semiconductor wafers or panels. The plurality of semiconductor wafers or panels have a different size or shape, such as circular and rectangular. A first one of the plurality of horizontal support members has a wing to support the plurality of different size or shape semiconductor wafers or panels. The plurality of horizontal support members has a first side horizontal support member, a second side horizontal support member, and a center horizontal support member disposed between the first side horizontal support member and the second side horizontal support member. The plurality of horizontal support members is insertable into the housing. One or more of the plurality of horizontal support members has an opening for laser identification.

Abstract: The present invention discloses a microminiature image acquisition and processing system package structure and a preparation method thereof. This structure includes optical coated glass, a CMOS chip, a wafer Re-Distribution Layer and a molding layer, the first surface of the CMOS chip is provided with a photosensitive and microlens region and a metal bonding pad, and a through-silicon via is etched in a second surface of the CMOS chip until it extends to the metal bonding pad on the first surface; the wafer Re-Distribution Layer covers the second surface of the CMOS chip and extends to the through-silicon via. The structure and the method of the present invention are integrated with wafer-level package and SIP integrated package technologies to achieve single package of the whole device, thereby greatly reducing the system complexity and power consumption, reducing the overall product size and signal path, and improving the image anti-interference capability.