Abstract: Apparatus for single photon source based on emitters with frequencies distributed in a chosen manner. In one embodiment, the apparatus comprises an opto-electronic component capable or emitting light pulses containing a single photon comprising a resonant optical cavity and a group of photon emitters placed in this optical cavity, a single one of these emitters having an emission frequency equal to approximately the resonant frequency of the cavity characterised in that all emitters have a spectral distribution with a concentration of emitter frequencies at a given frequency, and in that the cavity is made so that its resonant frequency is different from this concentration frequency so that the number of emitters with an emission frequency corresponding to the resonant frequency of the cavity is close to one.

Abstract: The invention concerns an optoelectronic component capable of emitting light pulses containing a single photon comprising an optical resonant cavity (100) and a photon-emitting unit (250) placed in said optical cavity (100), a single one of the transmitters (250) having a transmission frequency substantially equal to the resonance frequency (M) of the cavity (100). The invention is characterised in that the set of transmitters (250) has a spectral distribution having a concentration of frequencies of transmitters (250) in a given frequency (P) and the cavity (100) is designed to have a resonance frequency (M) sufficiently far from said concentration frequency (P) for the number of transmitters (250) having a transmission frequency corresponding to the resonance frequency (M) of the cavity (100) to be close to one.

Abstract: A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone.