Patents by Inventor Danhao WANG

Danhao WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • YTTRIUM-Doped III-Nitride Semiconductor Devices
    Publication number: 20260052717
    Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes an alloy layer including an alloy of a III-nitride material and a III-nitride semiconductor layer adjacent the alloy layer. The alloy includes yttrium. A heterointerface between the alloy layer and the III-nitride semiconductor layer has a Type-I band alignment.
    Type: Application
    Filed: June 20, 2024
    Publication date: February 19, 2026
    Inventors: Zetian MI, Ding WANG, Danhao WANG, Shubham MONDAL