Patents by Inventor Danial D. M. Wayner

Danial D. M. Wayner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation of porous semiconductors
    Patent number: 7332441
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.
    Type: Grant
    Filed: April 23, 2004
    Date of Patent: February 19, 2008
    Assignee: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, David J. Lockwood, Sylvie Morin
  • Luminescence stabilization of anodically oxidized porous silicon layers
    Patent number: 7119361
    Abstract: A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
    Type: Grant
    Filed: October 25, 2004
    Date of Patent: October 10, 2006
    Assignee: National Research Council
    Inventors: David John Lockwood, Rabah Boukherroub, Danial D. M. Wayner, Nobuyoshi Koshida
  • Passivation of porous semiconductors
    Patent number: 6815162
    Abstract: A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: November 9, 2004
    Assignee: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, David J. Lockwood, Sylvie Morin
  • Luminescence stabilization of anodically oxidized porous silicon layers
    Patent number: 6814849
    Abstract: A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
    Type: Grant
    Filed: December 10, 2001
    Date of Patent: November 9, 2004
    Assignee: National Research Council
    Inventors: David John Lockwood, Rabah Boukherroub, Danial D. M. Wayner, Nobuyoshi Koshida
  • Functionalised silicon surfaces, and method for their production
    Publication number: 20040096893
    Abstract: Provided is a method for modifying silicon with an organic molecule, under mild conditions. If the attached molecule is bi-functional, it may be subsequently reacted with a bio-molecule, to form a covalently attached layer of bio-molecule on the silicon surface.
    Type: Application
    Filed: November 18, 2003
    Publication date: May 20, 2004
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, James Wojtyk
  • Functionalized silicon surfaces, and method for their production
    Patent number: 6677163
    Abstract: Provided is a method for modifying silicon with an organic molecule, under mild conditions. If the attached molecule is bi-functional, it may be subsequently reacted with a bio-molecule, to form a covalently attached layer of bio-molecule on the silicon surface.
    Type: Grant
    Filed: November 16, 2000
    Date of Patent: January 13, 2004
    Assignee: National Research Council of Canada
    Inventors: Rabah Boukherroub, Danial D. M. Wayner, James Wojtyk